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Inventor

Takeo Yoshimi

Inventor
Kokubunji, JP

Overview

2→
Patents
1982–1987
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
Y10TTechnical subjects covered by former us classification25%
PatentTitleYear
4,699,825'Method of forming silicon nitride film and product'19874,365,264'Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1987Patents assigned to HITACHI LTD (2)· patent assignee history
1982–1987Based in Kokubunji, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD21982–1987
Locations
LocationPatentsSpan
Kokubunji, JP21982–1987