LexDanaLexDanabeta
Inventor

Daisuke Shiraishi

Inventor
Tokyo, JP

Overview

48→
Patents
2003–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01JElectric discharge tubes or discharge lamps21%
G05BControl or regulating systems in general10%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light6%
H01LSemiconductor devices5%
H04LTransmission of digital information, e.g. telegraphic communication5%
Y02PClimate change mitigation technologies in the production or processing of goods5%
G06FElectric digital data processing4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
G02BOptical elements, systems or apparatus4%
PatentTitleYear
10,872,750Plasma processing apparatus and plasma processing system202010,734,207Plasma processing apparatus and analysis method for analyzing plasma processing data202010,510,519Plasma processing apparatus and data analysis apparatus201910,495,842Lens barrel201910,408,762Plasma processing apparatus, plasma processing method and plasma processing analysis method201910,310,357Optical apparatus including elastic damping member201910,262,842Analysis method and semiconductor etching apparatus201910,262,840Plasma processing apparatus201910,184,182Plasma processing apparatus201910,153,217Plasma processing apparatus and plasma processing method20189,948,840Optical driving apparatus, lens apparatus, and image pickup apparatus20189,824,866'Plasma processing method'20179,464,936'Plasma processing apparatus and analyzing apparatus'20169,443,704'Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus'20169,324,588'Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus'20169,268,725'Data transferring apparatus and data transferring method'20169,110,461'Semiconductor manufacturing equipment'20159,112,736'Data transfer apparatus, data transfer method, and inter-chip communication system'20159,091,595'Analysis method, analysis device, and etching processing system'20158,992,721'Plasma processing apparatus'20158,924,001'Etching apparatus, control simulator, and semiconductor device manufacturing method'20148,828,184'Plasma processing apparatus and plasma processing method'20148,784,677'Plasma processing apparatus and plasma processing method'20148,769,166'Data transfer apparatus and data transfer method'20148,737,393'Communication apparatus, control method for communication apparatus, and computer program'20148,486,290'Etching apparatus, analysis apparatus, etching treatment method, and etching treatment program'20138,341,453'Transmission apparatus that transmits data according to a protocol, and method for measuring time in the transmission apparatus'20128,310,626'Liquid crystal light control device and method for producing the same comprising a step of emulsion polymerization of monomers of a liquid crystal resin composite'20128,282,849'Etching process state judgment method and system therefor'20128,140,727'Bus arbitration apparatus and method'20128,098,325'Digital camera'20128,083,960'Etching endpoint determination method'20118,009,698'Receiving apparatus, receiving method, communication method and transmission apparatus'20117,962,678'Bus arbitration apparatus and method'20117,839,583'Cam follower for lens barrel and lens barrel'20107,720,979'Communication apparatus'20107,515,360'Lens barrel and lens barrel system'20097,473,332'Method for processing semiconductor'20097,343,217'System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation'20087,330,346'Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus'20087,166,480'Particle control device and particle control method for vacuum processing apparatus'20077,122,096'Method and apparatus for processing semiconductor'20067,058,470'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor'20066,916,396'Etching system and etching method'20056,908,529'Plasma processing apparatus and method'20056,828,165'Semiconductor plasma processing apparatus with first and second processing state monitoring units'20046,706,543'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a therefor'20046,616,759'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2008Patents assigned to HITACHI LTD (5)· patent assignee history
2003–2009Based in Kudamatsu, JP· patent location history
2005–2020Patents assigned to HITACHI HIGH TECH CORP (27)· patent assignee history
2008–2019Based in Hikari, JP· patent location history
2009–2012Based in Hachioji, JP· patent location history
2010–2019Patents assigned to CANON KK (12)· patent assignee history
2010–2020Based in Tokyo, JP· patent location history
2011–2015Patents assigned to SHIRAISHI DAISUKE (14)· patent assignee history
2011–2015Patents assigned to KAGOSHIMA AKIRA (7)· patent assignee history
2018–2019Based in Utsunomiya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI HIGH TECH CORP272005–2020
SHIRAISHI DAISUKEself142011–2015
CANON KK122010–2019
KAGOSHIMA AKIRA72011–2015
HITACHI LTD52003–2008
Locations
LocationPatentsSpan
Tokyo, JP192010–2020
Hikari, JP122008–2019
Kudamatsu, JP102003–2009
Utsunomiya, JP32018–2019
Hachioji, JP32009–2012