Inventor

Keiji Horioka

Inventor

Kawasaki, JP

Overview

50→

Patents

1986–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 50 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%

H01JElectric discharge tubes or discharge lamps27%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices11%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%

C23CCoating metallic material4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

B05DProcesses for applying fluent materials to surfaces, in general2%

E01CConstruction of, or surfaces for, roads, sports grounds, or the like2%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry1%

B23KSoldering or unsoldering1%

PatentTitleYear

8,936,696'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2015 8,617,351'Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction'2013 7,972,469'Plasma processing apparatus'2011 7,879,186'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2011 7,846,849'Frequency tripling using spacer mask having interposed regions'2010 7,807,578'Frequency doubling using spacer mask'2010 7,575,007'Chamber recovery after opening barrier over copper'2009 7,422,654'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2008 7,374,636'Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor'2008 7,316,199'Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber'2008 7,196,283'Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface'2007 6,800,213'Precision dielectric etch using hexafluorobutadiene'2004 6,461,533'Etchant for silicon oxide and method'2002 6,432,318'Dielectric etch process reducing striations and maintaining critical dimensions'2002 6,261,428'Magnetron plasma process apparatus'2001 6,132,551'Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil'2000 5,888,338'Magnetron plasma processing apparatus and processing method'1999 5,733,713'Method of manufacturing semiconductor device'1998 5,717,294'Plasma process apparatus'1998 5,707,501'Filter manufacturing apparatus'1998 5,707,487'Method of manufacturing semiconductor device'1998 5,698,070'Method of etching film formed on semiconductor wafer'1997 5,660,744'Plasma generating apparatus and surface processing apparatus'1997 5,660,671'Magnetron plasma processing apparatus and processing method'1997 5,639,699'Focused ion beam deposition using TMCTS'1997 5,627,626'Projectin exposure apparatus'1997 5,621,498'Projection exposure apparatus'1997 5,607,599'Method of processing a magnetic thin film'1997 5,543,252'Method for manufacturing exposure mask and the exposure mask'1996 5,474,643'Plasma processing apparatus'1995 5,445,710'Method of manufacturing semiconductor device'1995 5,444,207'Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field'1995 5,437,961'Method of manufacturing semiconductor device'1995 5,429,730'Method of repairing defect of structure'1995 5,376,211'Magnetron plasma processing apparatus and processing method'1994 5,356,515'Dry etching method'1994 5,320,704'Plasma etching apparatus'1994 5,310,454'Dry etching method'1994 5,302,240'Method of manufacturing semiconductor device'1994 5,302,236'Method of etching object to be processed including oxide or nitride portion'1994 5,298,112'Method for removing composite attached to material by dry etching'1994 5,290,381'Plasma etching apparatus'1994 5,271,788'Plasma processing apparatus'1993 5,270,266'Method of adjusting the temperature of a semiconductor wafer'1993 5,259,923'Dry etching method'1993 5,258,332'Method of manufacturing semiconductor devices including rounding of corner portions by etching'1993 5,250,137'Plasma treating apparatus'1993 5,240,554'Method of manufacturing semiconductor device'1993 5,234,527'Liquid level detecting device and a processing apparatus'1993 4,595,601'Method of selectively forming an insulation layer'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2001Patents assigned to TOSHIBA KK (31)· patent assignee history

1986–1999Based in Kawasaki, JP· patent location history

1993–2001Patents assigned to TOKYO ELECTRON LTD (16)· patent assignee history

1993–2011Based in Tokyo, JP· patent location history

1993–1996Based in Kanagawa, JP· patent location history

1995–1998Based in Yokohama, JP· patent location history

2000–2015Patents assigned to APPLIED MATERIALS INC (14)· patent assignee history

2000–2015Based in Chiba, JP· patent location history

2013–2015Patents assigned to HORIOKA KEIJI (2)· patent assignee history

2013Patents assigned to BUCHBERGER JR DOUGLAS A (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	31	1986–2001
TOKYO ELECTRON LTD	16	1993–2001
APPLIED MATERIALS INC	14	2000–2015
HORIOKA KEIJIself	2	2013–2015
BUCHBERGER JR DOUGLAS A	1	2013

Locations

Location	Patents	Span
Kawasaki, JP	19	1986–1999
Chiba, JP	10	2000–2015
Yokohama, JP	9	1995–1998
Tokyo, JP	7	1993–2011
Kanagawa, JP	4	1993–1996