Inventor

Mizuhisa Nihei

Inventor

Kawasaki, JP

Overview

18→

Patents

2002–2018

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures22%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

H10DInorganic electric semiconductor devices11%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H10KOrganic electric solid-state devices6%

C01BNon-metallic elements3%

H01LSemiconductor devices3%

H05KPrinted circuits3%

B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units2%

PatentTitleYear

9,991,187Electronic device and method for manufacturing the same, and substrate structure and method for manufacturing the same2018 9,576,907'Wiring structure and method of manufacturing the same'2017 8,533,945'Wiring structure and method of forming the same'2013 8,372,487'Carbon nanotube device and manufacturing method of the same'2013 8,163,647'Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof'2012 8,029,760'Method of manufacturing carbon nanotube'2011 7,960,277'Electronic device and method of manufacturing the same'2011 7,948,081'Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device'2011 7,883,968'Field effect transistor and its manufacturing method'2011 7,867,814'Resistance memory element and method of manufacturing the same'2011 7,786,487'Semiconductor device and manufacturing method thereof'2010 7,692,238'Field effect transistor and its manufacturing method'2010 7,417,320'Substrate structure and manufacturing method of the same'2008 7,368,823'Semiconductor device and method of manufacturing the same'2008 7,094,692'Semiconductor device and method of manufacturing the same'2006 6,903,365'Electronic device using carbon element linear structure and production method thereof'2005 6,822,307'Semiconductor triode device having a compound-semiconductor channel layer'2004 6,455,361'Semiconductor device and manufacturing method of the same'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2018Patents assigned to FUJITSU LTD (16)· patent assignee history

2002–2018Based in Kawasaki, JP· patent location history

2011–2013Patents assigned to FUJITSU SEMICONDUCTOR LTD (2)· patent assignee history

2012–2013Patents assigned to NIHEI MIZUHISA (3)· patent assignee history

2012–2013Patents assigned to KAWABATA AKIO (2)· patent assignee history

2013Patents assigned to KONDO DAIYU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJITSU LTD	16	2002–2018
NIHEI MIZUHISAself	3	2012–2013
FUJITSU SEMICONDUCTOR LTD	2	2011–2013
KAWABATA AKIO	2	2012–2013
KONDO DAIYU	2	2013

Locations

Location	Patents	Span
Kawasaki, JP	18	2002–2018