Inventor

Phaedon Avouris

Inventor
Yorktown Heights, NY, US

Overview

63→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 63 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures20%
H10DInorganic electric semiconductor devices18%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
H10KOrganic electric solid-state devices9%
H01LSemiconductor devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G02BOptical elements, systems or apparatus3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
PatentTitleYear
10,613,027Chemical sensors based on plasmon resonance in graphene202010,564,097Chemical sensors based on plasmon resonance in graphene20209,772,448'Graphene plasmonic communication link'20179,759,643'Method and integrated device for analyzing liquid flow and liquid-solid interface interaction'20179,594,018'Chemical sensors based on plasmon resonance in graphene'20179,423,345'Chemical sensors based on plasmon resonance in graphene'20169,417,387'Graphene plasmonic communication link'20169,413,075'Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies'20169,412,815'Solution-assisted carbon nanotube placement with graphene electrodes'20169,335,471'Graphene plasmonic communication link'20169,310,285'Method and integrated device for analyzing liquid flow and liquid-solid interface interaction'20169,250,389'Graphene plasmonic communication link'20169,215,835'Graphene based structures and methods for shielding electromagnetic radiation'20159,210,835'Graphene based structures and methods for shielding electromagnetic radiation'20159,174,413'Graphene based structures and methods for shielding electromagnetic radiation'20159,174,414'Graphene based structures and methods for shielding electromagnetic radiation'20159,134,481'Graphene plasmonic communication link'20158,987,705'Carbon nanotube transistor employing embedded electrodes'20158,987,740'Graphene photodetector'20158,901,689'Graphene photodetector'20148,900,918'Graphene channel-based devices and methods for fabrication thereof'20148,878,193'Graphene channel-based devices and methods for fabrication thereof'20148,859,439'Solution-assisted carbon nanotube placement with graphene electrodes'20148,859,048'Selective placement of carbon nanotubes through functionalization'20148,809,153'Graphene transistors with self-aligned gates'20148,805,148'Generation of terahertz electromagnetic waves in graphene by coherent photon-mixing'20148,803,130'Graphene transistors with self-aligned gates'20148,753,965'Graphene transistor with a self-aligned gate'20148,748,871'Graphene devices and semiconductor field effect transistors in 3D hybrid integrated circuits'20148,698,165'Graphene channel-based devices and methods for fabrication thereof'20148,680,512'Graphene transistor with a self-aligned gate'20148,637,374'Method of fabricating self-aligned nanotube field effect transistor'20148,629,010'Carbon nanotube transistor employing embedded electrodes'20148,614,141'Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices'20138,614,435'Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices'20138,610,617'Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies'20138,610,989'Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure'20138,530,886'Nitride gate dielectric for graphene MOSFET'20138,455,297'Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology'20138,445,320'Graphene channel-based devices and methods for fabrication thereof'20138,344,358'Graphene transistor with a self-aligned gate'20138,283,453'Selective placement of carbon nanotubes through functionalization'20128,138,491'Self-aligned nanotube field effect transistor'20128,119,466'Self-aligned process for nanotube/nanowire FETs'20128,084,012'Selective placement of carbon nanotubes through functionalization'20118,053,782'Single and few-layer graphene based photodetecting devices'20118,003,453'Self-aligned process for nanotube/nanowire FETs'20117,955,931'Method and apparatus for fabricating a carbon nanotube transistor'20117,897,960'Self-aligned nanotube field effect transistor'20117,851,783'Method and apparatus for fabricating a carbon nanotube transistor'20107,635,856'Vertical nanotube field effect transistor'20097,598,516'Self-aligned process for nanotube/nanowire FETs'20097,582,534'Chemical doping of nano-components'20097,482,232'Method for fabricating a nanotube field effect transistor'20097,253,431'Method and apparatus for solution processed doping of carbon nanotube'20077,253,065'Self-aligned nanotube field effect transistor and method of fabricating same'20077,183,568'Piezoelectric array with strain dependant conducting elements and method therefor'20077,141,727'Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics'20067,115,916'System and method for molecular optical emission'20066,891,227'Self-aligned nanotube field effect transistor and method of fabricating same'20056,843,850'Catalyst-free growth of single-wall carbon nanotubes'20056,706,566'Methodology for electrically induced selective breakdown of nanotubes'20046,423,583'Methodology for electrically induced selective breakdown of nanotubes'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Patents assigned to IBM (62)· patent assignee history
2002–2020Based in Yorktown Heights, NY, US· patent location history
2011–2016Patents assigned to AVOURIS PHAEDON (24)· patent assignee history
2013–2014Patents assigned to LIN YU-MING (8)· patent assignee history
2013–2014Patents assigned to FARMER DAMON B (7)· patent assignee history
2013–2016Patents assigned to XIA FENGNIAN (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM622002–2020
AVOURIS PHAEDONself242011–2016
LIN YU-MING82013–2014
FARMER DAMON B72013–2014
XIA FENGNIAN72013–2016
Locations
LocationPatentsSpan
Yorktown Heights, New York, US632002–2020