Inventor
TETSUO ENDOH
Inventor
JP
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores19%
H10BElectronic memory devices15%
H10NElectric solid-state devices not otherwise provided for14%
H01LSemiconductor devices11%
H10DInorganic electric semiconductor devices10%
G06FElectric digital data processing6%
H01FMagnets5%
H03KPulse technique5%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use5%
G06NComputing arrangements based on specific computational models3%
PatentTitleYear
12,598,920Magnetoresistive element and magnetic memory device202612,554,311Semiconductor circuit device202612,520,732Tunnel junction laminated film, magnetic memory element, and magnetic memory202612,469,825Power semiconductor device and power semiconductor module each having electrodes on opposing surfaces of power semiconductor chip202512,455,610Computation processing device202512,424,273Storage circuit provided with variable resistance type elements202512,402,537Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element202512,402,326Magnetic film, magnetoresistance effect element and magnetic memory202512,371,813Silicon wafer and method for producing silicon wafer202512,325,908Platinum-based sputtering target, and method for producing the same202512,236,988Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system202512,148,468Semiconductor memory device and control device for semiconductor memory device202412,131,764Device, sensor node, access controller, data transfer method, and processing method in microcontroller202411,990,901Semiconductor circuit and support device for logic circuit design202411,963,458Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory202411,914,448Clustering device and clustering method202411,887,845Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate202411,862,217Device, sensor node, access controller, data transfer method, and processing method in microcontroller202411,829,863Neural network circuit device202311,790,966Nonvolatile logic circuit202311,770,981Magnetoresistive element and magnetic memory202311,765,981Magnetoresistance effect element and magnetic memory202311,705,176Storage circuit provided with variable resistance type elements, and its test device202311,690,299Magnetoresistance effect element and magnetic memory202311,631,804Magnetoresistive effect element and magnetic memory202311,610,615Lookup table circuit comprising a programmable logic device having a selection circuit connected to a memory cell array and separated from a path of a read circuit202311,610,614Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device202311,610,083Method for calculating clustering evaluation value, and method for determining number of clusters202311,600,313Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit202311,563,169Magnetic tunnel junction element and magnetic memory202311,557,719Magnetoresistance effect element, circuit device, and circuit unit202311,532,667Magnetic laminated film, magnetic memory element, and magnetic memory202211,514,964Storage circuit provided with variable resistance elements, reference voltage circuit and sense amplifier202211,508,436Memory device202211,468,932Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array202211,462,253Magnetoresistance effect element and magnetic memory202211,444,552Electric power converting device, and electricity generating system202211,430,498Magnetoresistance effect element, magnetic memory array, magnetic memory device, and write method for magnetoresistance effect element202211,417,378Integrated circuit device202211,322,221Memory device with pipelined access202211,264,565Magnetoresistance effect element and magnetic memory202211,258,006Magnetic memory element, method for producing same, and magnetic memory202211,200,933Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same202111,183,228Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circut unit202111,152,468Semiconductor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to UNIV TOHOKU (43)· patent assignee history
2021–2026Based in JP· patent location history
2022Patents assigned to SHARP SEMICONDUCTOR INNOVATION CORP (2)· patent assignee history
2024–2025Patents assigned to GLOBALWAFERS JAPAN CO LTD (2)· patent assignee history
2024Patents assigned to POWER SPIN INC (1)· patent assignee history
2025Patents assigned to TANAKA KIKIZOKU KOGYO K K (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV TOHOKU | 43 | 2021–2026 |
| GLOBALWAFERS JAPAN CO LTD | 2 | 2024–2025 |
| SHARP SEMICONDUCTOR INNOVATION CORP | 2 | 2022 |
| POWER SPIN INC | 1 | 2024 |
| TANAKA KIKIZOKU KOGYO K K | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 45 | 2021–2026 |