Inventor
J. Jack Ren
Inventor
Phoenix, AZ, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for32%
H10BElectronic memory devices23%
G11CStatic stores18%
B82YSpecific uses or applications of nanostructures9%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices9%
PatentTitleYear
10,003,019Semiconductor device, related manufacturing method, and related electronic device20189,502,645'Semiconductor device, related manufacturing method, and related electronic device'20167,279,341'Method for fabricating a flux concentrating system for use in a magnetoelectronics device'20077,105,363'Cladded conductor for use in a magnetoelectronics device and method for fabricating the same'20067,087,972'Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same'20066,943,038'Method for fabricating a flux concentrating system for use in a magnetoelectronics device'20056,885,074'Cladded conductor for use in a magnetoelectronics device and method for fabricating the same'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2007Patents assigned to FREESCALE SEMICONDUCTOR INC (5)· patent assignee history
2005–2007Based in Phoenix, AZ, US· patent location history
2016–2018Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI CORP (2)· patent assignee history
2016–2018Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 5 | 2005–2007 |
| SEMICONDUCTOR MFG INT SHANGHAI CORP | 2 | 2016–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Phoenix, AZ, US | 5 | 2005–2007 |
| Shanghai, CN | 2 | 2016–2018 |