Inventor
SHING-CHYANG PAN
Inventor
TW
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices19%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10BElectronic memory devices11%
H10NElectric solid-state devices not otherwise provided for11%
B81BMicrostructural devices or systems, e.g. micromechanical devices9%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C23CCoating metallic material6%
H10DInorganic electric semiconductor devices6%
G06NComputing arrangements based on specific computational models4%
PatentTitleYear
12,557,572Method for manufacturing a semiconductor device202612,486,566Physical vapor deposition chamber with target surface morphology monitor202512,451,393Etch stop layer for semiconductor devices202512,245,529Diffusion barrier layer in programmable metallization cell202512,151,932Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure202412,074,058Patterning methods for semiconductor devices202411,991,930Memory device and method for fabricating the same202411,814,283Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure202311,778,931Diffusion barrier layer in programmable metallization cell202311,769,693Metal-based etch-stop layer202311,697,588Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature202311,676,852Patterning methods for semiconductor devices202311,651,993Etch stop layer for semiconductor devices202311,594,678Diffusion barrier layer in programmable metallization cell202311,515,474Memory device and method for fabricating the same202211,479,849Physical vapor deposition chamber with target surface morphology monitor202211,322,396Etch stop layer for semiconductor devices202211,198,606Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (18)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 18 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 18 | 2021–2026 |