Inventor
FUMIMASA HORIKIRI
Inventor
JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10DInorganic electric semiconductor devices10%
C30BSingle-crystal growth9%
C23CCoating metallic material6%
H10NElectric solid-state devices not otherwise provided for6%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
C01GCompounds containing metals not covered by subclasses c01d or c01f3%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds3%
H03HImpedance networks, e.g. resonant circuits3%
PatentTitleYear
12,527,226Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element202612,408,556Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack202512,306,130Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensor202512,283,487Method for manufacturing structure202512,166,086Epitaxial substrate202412,104,279Nitride crystal substrate and method for manufacturing the same202412,054,847Method and device for manufacturing structure202412,002,880Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor202411,967,617Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof202411,946,874Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device202411,805,700Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate202311,756,827Structure manufacturing method and manufacturing device, and light irradiation device202311,744,159Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric element202311,732,380Nitride crystal substrate and method for manufacturing the same202311,640,906Crystal laminate, semiconductor device and method for manufacturing the same202311,557,713Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate202311,508,629Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate202211,473,907Method for manufacturing semiconductor structure, inspection method, and semiconductor structure202211,393,693Structure manufacturing method and intermediate structure202211,377,756Nitride crystal substrate and method for manufacturing the same202211,380,765Structure and intermediate structure202211,367,826Piezoelectric laminate, method of manufacturing the piezoelectric laminate and piezoelectric device202211,342,220Structure manufacturing method and manufacturing device, and light irradiation device202211,339,500Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device202211,342,191Structure manufacturing method, structure manufacturing apparatus and intermediate structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to SUMITOMO CHEMICAL CO (25)· patent assignee history
2022–2026Patents assigned to SCIOCS CO LTD (9)· patent assignee history
2022–2026Based in JP· patent location history
2023Patents assigned to UNIV HOSEI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO CHEMICAL CO | 25 | 2022–2026 |
| SCIOCS CO LTD | 9 | 2022–2026 |
| UNIV HOSEI | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 25 | 2022–2026 |