Inventor
Meng XIAO
Inventor
CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices15%
C01BNon-metallic elements8%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds8%
G02BOptical elements, systems or apparatus8%
G11CStatic stores8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
PatentTitleYear
12,532,513Method of forming top select gate trenches202612,116,275Method for preparing battery-grade anhydrous iron phosphate from liquid crude monoammonium phosphate202412,032,118Isotropic filters in spatial frequency domain by a photonic crystal slab202412,021,126Method of forming top select gate trenches202411,990,506Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (3)· patent assignee history
2024Patents assigned to UNIV LELAND STANFORD JUNIOR (1)· patent assignee history
2024Patents assigned to UNIV SICHUAN (1)· patent assignee history
2024–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 3 | 2024–2026 |
| UNIV LELAND STANFORD JUNIOR | 1 | 2024 |
| UNIV SICHUAN | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 5 | 2024–2026 |