Inventor

Seok-Woo Nam

Inventor

Yongin-si, KR

Overview

2000–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H10BElectronic memory devices27%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H01LSemiconductor devices10%

C23CCoating metallic material2%

G11CStatic stores1%

H01JElectric discharge tubes or discharge lamps1%

H05HPlasma technique1%

PatentTitleYear

10,410,839Method of processing a substrate using an ion beam and apparatus for performing the same2019 9,997,538Semiconductor device including channel structure2018 9,847,422Semiconductor device and method of fabricating the same2017 9,595,612'Semiconductor device and method of fabricating the same'2017 9,455,259'Semiconductor devices including diffusion barriers with high electronegativity metals'2016 9,449,973'Semiconductor device'2016 9,263,588'Semiconductor device and method of fabricating the same'2016 9,230,922'Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same'2016 9,184,232'Semiconductor device and method of fabricating the same'2015 9,153,590'Semiconductor devices including buried channels'2015 8,969,939'Semiconductor device and method of fabricating the same'2015 8,604,550'Semiconductor devices including gate structure and method of fabricating the same'2013 8,519,465'Semiconductor device and method of fabricating the same'2013 8,481,398'Method of forming semiconductor device having a capacitor'2013 8,247,859'Semiconductor device and method of fabricating the same'2012 8,039,344'Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same'2011 8,012,823'Methods of fabricating stack type capacitors of semiconductor devices'2011 7,928,495'Semiconductor device and method of fabricating the same'2011 7,833,875'Semiconductor device and method of fabricating the same'2010 7,741,222'Etch stop structure and method of manufacture, and semiconductor device and method of manufacture'2010 7,521,375'Method of forming an oxinitride layer'2009 7,297,620'Method of forming an oxide layer including increasing the temperature during oxidation'2007 7,282,407'Semiconductor memory device and method of manufacturing for preventing bit line oxidation'2007 7,238,585'Method of forming a storage electrode of a semiconductor device'2007 7,153,750'Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes'2006 7,119,392'Storage electrode of a semiconductor device and method of forming the same'2006 7,119,029'Method of oxidizing a silicon substrate and method of forming an oxide layer using the same'2006 6,838,719'Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces'2005 6,329,266'Methods of forming isolation trenches including damaging a trench isolation mask'2001 6,215,143'DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node'2001 6,214,688'Methods of forming integrated circuit capacitors having U-shaped electrodes'2001 6,133,109'Method for manufacturing a DRAM cell capacitor'2000 6,013,549'DRAM cell capacitor and method for manufacturing the same'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (33)· patent assignee history

2000–2007Based in Seoul, KR· patent location history

2006–2017Based in Yongin-si, KR· patent location history

2006Based in Gyeonggi-do, KR· patent location history

2010Based in Kyungki-do, KR· patent location history

2011–2019Based in Seongnam-si, KR· patent location history

2012–2013Patents assigned to NAM SEOK-WOO (4)· patent assignee history

2012–2013Patents assigned to KIM JUNG-HWAN (2)· patent assignee history

2012–2013Patents assigned to KIM TAE-HYUN (2)· patent assignee history

2012–2013Patents assigned to KIM YONG-SEOK (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	33	2000–2019
NAM SEOK-WOOself	4	2012–2013
KIM JUNG-HWAN	2	2012–2013
KIM TAE-HYUN	2	2012–2013
KIM YONG-SEOK	2	2012–2013

Locations

Location	Patents	Span
Yongin-si, KR	14	2006–2017
Seongnam-si, KR	10	2011–2019
Seoul, KR	7	2000–2007
Kyungki-do, KR	1	2010
Gyeonggi-do, KR	1	2006