Inventor
Ronald S. Besser
Inventor
Sunnyvale, CA, US
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps24%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution17%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy10%
H05KPrinted circuits10%
C25DProcesses for the electrolytic or electrophoretic production of coatings7%
H10DInorganic electric semiconductor devices7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
PatentTitleYear
10,847,807Flexible, planar, double sided air breathing microscale fuel cell20209,437,893'In-membrane micro fuel cell'20168,741,501'Nanoengineered membrane-electrode assembly for high-temperature proton exchange membrane fuel cells'20146,731,061'Dual layer electroplated structure for a flat panel display device'20046,596,146'Electroplated structure for a flat panel display device'20036,448,708'Dual-layer metal for flat panel display'20026,414,428'Flat-panel display with intensity control to reduce light-centroid shifting'20026,268,229'Integrated circuit devices and methods employing amorphous silicon carbide resistor materials'20016,235,179'Electroplated structure for a flat panel display device'20016,031,250'Integrated circuit devices and methods employing amorphous silicon carbide resistor materials'20005,454,928'Process for forming solid conductive vias in substrates'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995Based in San Mateo, CA, US· patent location history
2000–2001Patents assigned to ADVANCED TECH MATERIALS (2)· patent assignee history
2000–2001Patents assigned to SILICON VIDEO CORP (2)· patent assignee history
2000–2003Based in Sunnyvale, CA, US· patent location history
2001–2004Patents assigned to CANDESCENT TECH CORP (4)· patent assignee history
2002–2004Patents assigned to CANDESCENT INTELLECTUAL PROP (2)· patent assignee history
2002–2004Based in Ruston, LA, US· patent location history
2014Patents assigned to BESSER RONALD S (1)· patent assignee history
2014–2020Based in New Providence, NJ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANDESCENT TECH CORP | 4 | 2001–2004 |
| ADVANCED TECH MATERIALS | 2 | 2000–2001 |
| CANDESCENT INTELLECTUAL PROP | 2 | 2002–2004 |
| SILICON VIDEO CORP | 2 | 2000–2001 |
| BESSER RONALD Sself | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 5 | 2000–2003 |
| New Providence, New Jersey, US | 3 | 2014–2020 |
| Ruston, LA, US | 2 | 2002–2004 |
| San Mateo, California, US | 1 | 1995 |