Inventor
Chang-yin CHEN
Inventor
TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H01JElectric discharge tubes or discharge lamps3%
PatentTitleYear
12,408,411Semiconductor device202512,261,051Semiconductor device with fin isolation202512,237,417FinFET device and method of forming and monitoring quality of the same202512,218,216Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin202512,211,750Mechanisms for forming FinFET device202512,125,891Semiconductor device having gate spacers extending below a fin top surface202412,002,871Semiconductor device structure with work function layer and method for forming the same202411,973,144Method of manufacturing a semiconductor and a semiconductor device202411,929,419Semiconductor device202411,854,825Gate structure of semiconductor device and method for forming the same202311,842,932Notched gate structure fabrication202311,784,055Method of forming semiconductor device with fin isolation202311,721,762Fin field effect transistor (FinFET) device and method for forming the same202311,527,636Semiconductor device structure with work function layer and method for forming the same202211,522,084FinFET device and method of forming and monitoring quality of the same202211,380,590Mechanisms for forming FinFET device202211,342,458Semiconductor structure and fabricating method thereof202211,328,962Notched gate structure fabrication202211,309,189Fin field effect transistor (FinFET) device structure and method for forming the same202211,276,578Semiconductor device with fin isolation202211,257,931Gate structure of field effect transistor with footing202211,189,728Method of manufacturing a semiconductor device and a semiconductor device202111,158,545Methods of forming isolation features in metal gates202111,158,744Fin field effect transistor (FinFET) device and method for forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 24 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 24 | 2021–2025 |