Inventor
Junichiro Kanbe
Inventor
Yokohama, JP
Overview
Patents· 144 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Gprimary
G03GElectrography22%
G09GArrangements or circuits for control of indicating devices using static means to present variable information18%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
G03CPhotosensitive materials for photographic purposes6%
C09KMaterials for miscellaneous applications, not provided for elsewhere5%
Y02PClimate change mitigation technologies in the production or processing of goods3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%
PatentTitleYear
6,159,562'Discotic liquid crystal device and alignment method therefor'20006,091,388'Method of driving optical modulation device'20005,886,680'Method of driving optical modulation device'19995,877,739'Driving method for optical modulation device'19995,847,686'Driving method for optical modulation device'19985,841,417'Method of driving optical modulation device'19985,831,587'Method of driving optical modulation device'19985,825,390'Method of driving optical modulation device'19985,812,108'Method of driving optical modulation device'19985,790,449'Method of driving optical modulation device'19985,774,102'Driving method for optical modulation device'19985,757,350'Driving method for optical modulation device'19985,746,939'Liquid crystal device'19985,726,460'Liquid crystal device'19985,724,114'Liquid crystal device with composition containing optically active material and material showing smectic, smectic A and chiral smectic C phases upon temperature decrease'19985,724,059'Method for driving optical modulation device'19985,717,419'Method for driving optical modulation device'19985,703,614'Driving method for ferroelectric optical modulation device'19975,696,526'Method of driving optical modulation device'19975,696,525'Method of driving optical modulation device'19975,671,033'Liquid crystal device having mixture of cholesteric and smectic liquid crystals and alignment treatment on only one substrate'19975,648,830'Liquid crystal device having composition of at least two smectic compounds and one cholesteric compound'19975,638,196'Driving method for optical modulation device'19975,633,652'Method for driving optical modulation device'19975,621,427'Method of driving optical modulation device'19975,604,614'Liquid crystal device with one liquid crystal showing a cholesteric phase and one showing a chiral smectic phase'19975,592,315'Liquid crystal device and liquid crystal apparatus'19975,592,192'Method of driving optical modulation device'19975,582,945'Photoconductive member'19965,582,947'Glow discharge process for making photoconductive member'19965,568,293'Liquid crystal display having trapezoidal color filters formed from a low-temperature curing polyamino resin having a photosensitive group'19965,565,884'Method of driving optical modulation device'19965,559,616'Driving method for ferroelectric liquid crystal device with partial erasure and partial writing'19965,548,303'Method of driving optical modulation device'19965,548,424'Liquid crystal device having two resins films formed from solutions of different viscosities'19965,500,751'Ferroelectric liquid crystal color filter surrounded by a heat fusible resin'19965,448,383'Method of driving ferroelectric liquid crystal optical modulation device'19955,440,412'Driving method for a ferroelectric optical modulation device'19955,436,743'Method for driving optical modulation device'19955,426,525'Ferroelectric smectic liquid crystal device'19955,422,749'Ferroelectric smetic liquid crystal device'19955,418,634'Method for driving optical modulation device'19955,398,126'Ferroelectric color liquid crystal device lacking alignment defects'19955,381,254'Method for driving optical modulation device'19955,311,343'Liquid crystal device with at least two liquid crystal compounds, one having and one not having a chiral smectic phase'19945,301,049'Liquid crystal device with at least two liquid crystal compounds, one having one not having a cholesteric phase'19945,296,953'Driving method for ferro-electric liquid crystal optical modulation device'19945,258,250'Photoconductive member'19935,255,110'Driving method for optical modulation device using ferroelectric liquid crystal'19935,200,848'Ferroelectric smectic liquid crystal device'19935,194,359'Developing method for one component developer'19935,141,836'Method of forming a photoconductive member with silicon, hydrogen and/or halogen and carbon'19925,132,818'Ferroelectric liquid crystal optical modulation device and driving method therefor to apply an erasing voltage in the first time period of the scanning selection period'19925,120,466'Fluid crystal device'19925,101,289'Chiral smectic color display device with interval between color filters: color filter film thickness ratio of 0-5'19925,096,798'Developing method for one-component developer'19925,092,665'Driving method for ferroelectric liquid crystal optical modulation device using an auxiliary signal to prevent inversion'19925,093,737'Method for driving a ferroelectric optical modulation device therefor to apply an erasing voltage in the first step'19925,044,310'Developing apparatus for non-magnetic developer'19915,032,485'Developing method for one-component developer'19915,026,144'Liquid crystal device, alignment control method therefor and driving method therefor'19915,018,841'Driving method for optical modulation device'19914,981,340'Method and apparatus for readout of information from display panel'19914,941,736'Ferroelectric liquid crystal device and driving method therefor'19904,932,759'Driving method for optical modulation device'19904,932,758'Ferroelectric smectic liquid crystal device having a bistable alignment state providing two stable orientation states'19904,917,471'Liquid crystal device'19904,917,470'Driving method for liquid crystal cell and liquid crystal apparatus'19904,913,088'Apparatus for developer transfer under electrical bias'19904,844,597'Liquid crystal device utilizing chiral-smectic and nematic phases for thinner crystal layers'19894,836,656'Driving method for optical modulation device'19894,800,382'Driving method for liquid crystal device'19894,796,980'Ferroelectric liquid crystal optical modulation device with regions within pixels to initiate nucleation and inversion'19894,795,688'Layered photoconductive member comprising amorphous silicon'19894,781,441'Method of controlling orientation of liquid crystal, device used therein and liquid crystal device produced thereby'19884,775,225'Liquid crystal device having pillar spacers with small base periphery width in direction perpendicular to orientation treatment'19884,747,671'Ferroelectric optical modulation device and driving method therefor wherein electrode has delaying function'19884,720,173'Display having an orientation treatment between 0.degree. and 15.degree. to the spacer wall'19884,714,323'Ferroelectric liquid crystal device having chiral smectic and nematic liquid crystal composition'19874,712,877'Ferroelectric display panel of varying thickness and driving method therefor'19874,712,875'Dimensions of spacer particles for a ferroelectric liquid crystal display'19874,712,872'Liquid crystal device'19874,712,873'Liquid crystal optical device'19874,709,995'Ferroelectric display panel and driving method therefor to achieve gray scale'19874,709,994'Liquid crystal device using ferroelectric liquid crystal twisted in two stable states'19874,682,858'Liquid crystal device having reduced-pressure region in communication with ferroelectric liquid crystal'19874,681,404'Liquid crystal device and driving method therefor'19874,671,642'Image forming apparatus'19874,655,561'Method of driving optical modulation device using ferroelectric liquid crystal'19874,639,089'Liquid crystal device'19874,637,972'Light receiving member having an amorphous silicon photoconductor'19874,636,450'Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions'19874,609,601'Process of imaging an amorphous Si(C) photoconductive member'19864,592,985'Photoconductive member having amorphous silicon layers'19864,557,987'Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers'19854,555,465'Photoconductive member of amorphous silicon'19854,547,448'Photoconductive member comprising silicon and oxygen'19854,539,283'Amorphous silicon photoconductive member'19854,536,460'Photoconductive member'19854,536,459'Photoconductive member having multiple amorphous layers'19854,529,679'Photoconductive member'19854,525,442'Photoconductive member containing an amorphous boron layer'19854,522,905'Amorphous silicon photoconductive member with interface and rectifying layers'19854,511,239'Developing device'19854,501,807'Photoconductive member having an amorphous silicon layer'19854,490,454'Photoconductive member comprising multiple amorphous layers'19844,490,453'Photoconductive member of a-silicon with nitrogen'19844,486,521'Photoconductive member with doped and oxygen containing amorphous silicon layers'19844,483,911'Photoconductive member with amorphous silicon-carbon surface layer'19844,473,627'Developing method for developer transfer under electrical bias and apparatus therefor'19844,472,492'Method for fabricating and annealing an electrophotographic image forming member'19844,471,694'Printing process for transferring fixed image from master'19844,468,443'Process for producing photoconductive member from gaseous silicon compounds'19844,465,750'Photoconductive member with a -Si having two layer regions'19844,464,451'Electrophotographic image-forming member having aluminum oxide layer on a substrate'19844,461,820'Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate'19844,460,670'Photoconductive member with .alpha.-Si and C, N or O and dopant'19844,460,669'Photoconductive member with .alpha.-Si and C, U or D and dopant'19844,452,875'Amorphous photoconductive member with .alpha.-Si interlayers'19844,452,874'Photoconductive member with multiple amorphous Si layers'19844,443,529'Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier layer'19844,425,373'Method for image development by application of alternating bias'19844,423,133'Photoconductive member of amorphous silicon'19834,420,546'Member for electrophotography with a-Si and c-Si layers'19834,416,962'Electrophotographic member having aluminum oxide layer'19834,414,319'Photoconductive member having amorphous layer containing oxygen'19834,405,702'Electrophotographic image-forming member with ladder-type silicon resin layer'19834,395,476'Developing method for developer transfer under A.C. electrical bias and apparatus therefor'19834,391,891'Developing method using (alternating electric field and) a developer of the field-dependent type and an apparatus therefor'19834,385,822'Method and apparatus for forming and recording composite images'19834,378,158'Developing apparatus'19834,373,468'Developing apparatus'19834,368,687'Method and apparatus for developing magnetic latent image'19834,365,586'Developing device'19824,363,861'Toner transfer development using alternating electric field'19824,359,512'Layered photoconductive member having barrier of silicon and halogen'19824,342,822'Method for image development using electric bias'19824,341,179'Developing device'19824,337,724'Developing device'19824,337,306'Developing method in which a bias is adjustable in accordance with a latent image and an apparatus therefor'19824,314,017'Developer without carrier powder having an improved triboelectric charging property'19824,297,970'Developing apparatus'19814,292,387'Magnetic developing method under A.C. electrical bias and apparatus therefor'19814,265,197'Developing method and apparatus using application of first and second alternating bias voltages for latent image end portions and tone gradation, respectively'1981Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1981–2000Patents assigned to CANON KK (144)· patent assignee history
1981–1993Based in Tokyo, JP· patent location history
1982–2000Based in Yokohama, JP· patent location history
1985Patents assigned to KANBE JUNICHIRO (1)· patent assignee history
1985Patents assigned to MISUMI TERUO (1)· patent assignee history
1985Patents assigned to OSATO YOICHI (1)· patent assignee history
1985Patents assigned to SAITOH KEISHI (1)· patent assignee history
1985–1996Based in Shimomaruko, Ohta-ku, Tokyo, JP· patent location history
1992Based in Yokahama, JP· patent location history
2000Based in Machida, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 144 | 1981–2000 |
| KANBE JUNICHIROself | 1 | 1985 |
| MISUMI TERUO | 1 | 1985 |
| OSATO YOICHI | 1 | 1985 |
| SAITOH KEISHI | 1 | 1985 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 114 | 1982–2000 |
| Tokyo, JP | 25 | 1981–1993 |
| Shimomaruko, Ohta-ku, Tokyo, JP | 2 | 1985–1996 |
| Machida, JP | 1 | 2000 |
| Yokahama, JP | 1 | 1992 |