Inventor
Qiging Ouyang
Inventor
Yorktown Heights, NY, US
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution25%
PatentTitleYear
7,691,716'Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation'20107,675,055'Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof'20107,138,697'Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2010Patents assigned to IBM (3)· patent assignee history
2006–2010Based in Yorktown Heights, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 3 | 2006–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yorktown Heights, New York, US | 3 | 2006–2010 |