LexDanaLexDanabeta
Inventor

Kuang-Yuan Hsu

Inventor
Taichung, TW

Overview

68→
Patents
2011–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
C23CCoating metallic material3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
11,133,447Micro light-emitting device, structure, and display thereof202111,063,181Patterned epitaxial substrate and semiconductor structure202111,053,584System and method for supplying a precursor for an atomic layer deposition (ALD) process202110,867,789Treatment to control deposition rate202010,796,898Treatment system and method202010,714,586Semiconductor device and a method for fabricating the same202010,651,283Metal gate structure202010,529,553Treatment system and method202010,522,544Techniques providing metal gate devices with multiple barrier layers201910,483,169FinFET cut-last process using oxide trench fill201910,443,127System and method for supplying a precursor for an atomic layer deposition (ALD) process201910,388,515Treatment to control deposition rate201910,374,055Buffer layer on semiconductor devices201910,312,236Techniques providing metal gate devices with multiple barrier layers201910,312,075Treatment system and method201910,269,912Metal gate structure201910,153,351Semiconductor device and a method for fabricating the same201810,096,600Semiconductor device with metal gate20189,941,214Semiconductor devices, methods of manufacture thereof, and inter-metal dielectric (IMD) structures20189,941,373Metal gate structure20189,859,386'Self aligned contact scheme'20189,852,947Forming sidewall spacers using isotropic etch20179,831,243Techniques providing metal gate devices with multiple barrier layers20179,685,444'Semiconductor device with metal gate'20179,659,776'Doping for FinFET'20179,548,366'Self aligned contact scheme'20179,449,832'Metal gate structure'20169,449,828'Method of forming metal gate electrode'20169,431,505'Method of making a gate structure'20169,373,581'Interconnect structure and method for forming the same'20169,362,404'Doping for FinFET'20169,337,110'Semiconductor device having metal gate electrode and method of fabrication thereof'20169,263,546'Method of fabricating a gate dielectric layer'20169,236,294'Method for forming semiconductor device structure'20169,196,691'Metal gate electrode of a field effect transistor'20159,153,538'Semiconductor devices and methods of manufacture thereof'20159,129,953'Method of making a gate structure'20159,105,624'Techniques providing metal gate devices with multiple barrier layers'20159,093,265'High UV curing efficiency for low-k dielectrics'20159,076,889'Replacement gate semiconductor device'20159,048,334'Metal gate structure'20159,035,373'Gate dielectric of semiconductor device'20158,993,442'Interconnect structure and method for forming the same'20158,962,477'High temperature anneal for stress modulation'20158,952,462'Method and apparatus of forming a gate'20158,952,458'Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer'20158,847,333'Techniques providing metal gate devices with multiple barrier layers'20148,779,530'Metal gate structure of a field effect transistor'20148,765,603'Method of forming a buffer layer'20148,716,785'Method and system for metal gate formation with wider metal gate fill margin'20148,658,525'Methods for a gate replacement process'20148,633,536'Gate dielectric of semiconductor device'20148,580,698'Method for fabricating a gate dielectric layer'20138,575,727'Gate structures'20138,546,885'Metal gate electrode of a field effect transistor'20138,530,294'Stress modulation for metal gate semiconductor device'20138,441,107'Gate structures'20138,367,563'Methods for a gate replacement process'20138,357,603'Metal gate fill and method of making'20138,334,198'Method of fabricating a plurality of gate structures'20128,334,197'Method of fabricating high-k/metal gate device'20128,329,546'Modified profile gate structure for semiconductor device and methods of forming thereof'20128,283,222'Method to form a semiconductor device having gate dielectric layers of varying thickness'20128,278,173'Method of fabricating gate structures'20128,193,081'Method and system for metal gate formation with wider metal gate fill margin'20128,093,117'Method of forming a metal gate'20128,048,810'Method for metal gate N/P patterning'20118,008,143'Method to form a semiconductor device having gate dielectric layers of varying thicknesses'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (36)· patent assignee history
2011–2019Based in Jhubei City, TW· patent location history
2012–2016Patents assigned to HSU KUANG-YUAN (23)· patent assignee history
2012–2016Patents assigned to LEE DA-YUAN (16)· patent assignee history
2012–2015Patents assigned to LEE WEI-YANG (8)· patent assignee history
2012–2021Based in Taichung, TW· patent location history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (30)· patent assignee history
2018Based in Hsinchu, TW· patent location history
2019Based in Tiachung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG362011–2016
TAIWAN SEMICONDUCTOR MFG CO LTD302015–2021
HSU KUANG-YUANself232012–2016
LEE DA-YUAN162012–2016
LEE WEI-YANG82012–2015
Locations
LocationPatentsSpan
Taichung, TW322012–2021
Jhubei City, TW322011–2019
Tiachung, TW12019
Hsinchu, TW12018