Inventor
Jeng Gong
Inventor
Hsinchu, TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices52%
H01LSemiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H03FAmplifiers2%
H03KPulse technique2%
PatentTitleYear
9,455,339'High voltage device and method for manufacturing the same'20169,397,205'Semiconductor device'20169,331,143'Semiconductor structure having field plates over resurf regions in semiconductor substrate'20169,306,043'Bipolar junction transistor and operating and manufacturing method for the same'20169,153,574'Semiconductor device and method of fabricating the same'20159,041,142'Semiconductor device and operating method for the same'20159,024,365'High voltage junction field effect transistor and manufacturing method thereof'20158,963,238'Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same'20158,952,744'Semiconductor device and operating method for the same'20158,841,709'JFET device and method of manufacturing the same'20148,698,240'Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same'20148,604,549'Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise'20138,557,653'Junction-field-effect-transistor devices and methods of manufacturing the same'20138,350,304'Junction-field-effect-transistor devices and methods of manufacturing the same'20138,264,056'Schottky diode'20128,158,475'Gate electrodes of HVMOS devices having non-uniform doping concentrations'20128,159,029'High voltage device having reduced on-state resistance'20127,816,744'Gate electrodes of HVMOS devices having non-uniform doping concentrations'20107,714,663'Cascode low noise amplifier with a source coupled active inductor'20106,734,493'Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer'20046,468,870'Method of fabricating a LDMOS transistor'20026,205,013'Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuits'20016,040,601'High voltage device'20005,966,608'Method of forming high voltage device'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2015Based in Hsinchu, TW· patent location history
2002–2012Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2012–2016Patents assigned to MACRONIX INT CO LTD (14)· patent assignee history
2012–2015Patents assigned to GONG JENG (8)· patent assignee history
2012–2014Patents assigned to CHAN WING CHOR (4)· patent assignee history
2012Patents assigned to CHIANG PUO-YU (2)· patent assignee history
2012–2016Based in Taichung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 14 | 2012–2016 |
| GONG JENGself | 8 | 2012–2015 |
| TAIWAN SEMICONDUCTOR MFG | 5 | 2002–2012 |
| CHAN WING CHOR | 4 | 2012–2014 |
| CHIANG PUO-YU | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 14 | 1999–2015 |
| Taichung, TW | 10 | 2012–2016 |