Inventor

Akimasa Kinoshita

Inventor

Matsumoto, JP

Overview

2016–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 39 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices37%

H10DInorganic electric semiconductor devices37%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

PatentTitleYear

10,937,901Insulated gate semiconductor device with injuction supression structure and method of manufacturing same2021 10,886,371Silicon carbide semiconductor device2021 10,879,386Semiconductor device and method of manufacturing a semiconductor device2020 10,840,340Silicon carbide semiconductor device and silicon carbide semiconductor circuit device2020 10,692,979Method of manufacturing semiconductor device2020 10,644,145Semiconductor device and method of manufacturing semiconductor device2020 10,622,446Silicon carbide based power semiconductor device with low on voltage and high speed characteristics2020 10,600,864Semiconductor device2020 10,522,676Semiconductor device and method of manufacturing semiconductor device2019 10,418,477Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device2019 10,403,749Method of manufacturing semiconductor device2019 10,403,713Method of manufacturing semiconductor device2019 10,396,149Semiconductor device and method of manufacturing semiconductor device2019 10,396,161Semiconductor device and method of manufacturing semiconductor device2019 10,319,820Semiconductor device having silicon carbide layer provided on silicon carbide substrate2019 10,319,824Semiconductor device includes a substrate having a bandgap wider than that of silicon and method of manufacturing semiconductor device2019 10,276,709Semiconductor device and method of manufacturing semiconductor device2019 10,276,653Semiconductor device and method of manufacturing semiconductor device2019 10,269,952Semiconductor device having steps in a termination region and manufacturing method thereof2019 10,263,082Semiconductor device having a gate electrode formed inside a trench2019 10,204,990Semiconductor device and method of manufacturing semiconductor device2019 10,199,493Semiconductor device and method of manufacturing semiconductor device2019 10,164,084Semiconductor device and method of manufacturing the same2018 10,147,791Semiconductor device and method of manufacturing semiconductor device2018 10,090,417Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device2018 10,079,298Semiconductor device and method of manufacturing semiconductor device2018 10,069,004Semiconductor device and method of manufacturing semiconductor device2018 10,062,750Semiconductor device and method of manufacturing semiconductor device2018 9,960,235Semiconductor device2018 9,793,392'Semiconductor device'2017 9,768,260'Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby'2017 9,728,606'Silicon carbide semiconductor element and fabrication method thereof'2017 9,722,029'Semiconductor device and method of manufacturing semiconductor device'2017 9,455,326'Wide bandgap semiconductor device'2016 9,419,133'Semiconductor device and fabrication method of semiconductor device'2016 9,281,194'Fabrication method of silicon carbide semiconductor apparatus'2016 9,269,579'Method for manufacturing silicon carbide semiconductor device'2016 9,252,218'Silicon carbide semiconductor element and fabrication method thereof'2016 9,230,958'Wide band gap semiconductor apparatus and fabrication method thereof'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2021Patents assigned to FUJI ELECTRIC CO LTD (39)· patent assignee history

2016Patents assigned to KINOSHITA AKIMASA (2)· patent assignee history

2016Patents assigned to IMAI FUMIKAZU (1)· patent assignee history

2016Patents assigned to IWAMURO NORIYUKI (1)· patent assignee history

2016–2018Based in Tsukuba, JP· patent location history

2017Patents assigned to NAT INST ADVANCED IND SCIENCE & TECH (1)· patent assignee history

2017–2021Based in Matsumoto, JP· patent location history

2017–2021Based in Nagano, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJI ELECTRIC CO LTD	39	2016–2021
KINOSHITA AKIMASAself	2	2016
IMAI FUMIKAZU	1	2016
IWAMURO NORIYUKI	1	2016
NAT INST ADVANCED IND SCIENCE & TECH	1	2017

Locations

Location	Patents	Span
Matsumoto, JP	24	2017–2021
Tsukuba, JP	9	2016–2018
Nagano, JP	6	2017–2021