Inventor
FABRICE NEMOUCHI
Inventor
FR
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices21%
H10NElectric solid-state devices not otherwise provided for15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G06NComputing arrangements based on specific computational models9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
B82YSpecific uses or applications of nanostructures6%
G02BOptical elements, systems or apparatus2%
H03KPulse technique2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
PatentTitleYear
12,596,948Method for making a quantum device202612,550,404Semiconductor device and associated manufacturing method202612,477,958Method for making an electronic device with superconductor qubit(s) including at least one JoFET202512,477,785Quantum device and method for producing the same202512,417,919Method for producing a superconducting vanadium silicide on a silicon layer202512,408,405Device comprising spacers including a localised airgap and associated manufacturing methods202512,402,542Josephson transistor202511,941,485Method of making a quantum device202411,929,290Method of manufacturing microelectronic components202411,698,488Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate202311,631,739Transistor having blocks of source and drain silicides near the channel202311,515,148Method for producing at least one device in compressive strained semiconductor202211,387,147Method for producing a component by filling a cavity within an electrical isolation area with carbon-based material202211,362,181Method for manufacturing an electronic component having multiple quantum dots202211,217,446Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistor2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (14)· patent assignee history
2022–2026Based in FR· patent location history
2025Patents assigned to UNIV GRENOBLE ALPES (2)· patent assignee history
2026Patents assigned to COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 14 | 2022–2026 |
| UNIV GRENOBLE ALPES | 2 | 2025 |
| COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 15 | 2022–2026 |