Inventor

SHENG-CHIH LAI

Inventor

TW

Overview

2021–2025

Patent span

Electricity

Primary field (CPC H)

Patents· 79 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices31%

H01LSemiconductor devices17%

H10DInorganic electric semiconductor devices16%

G11CStatic stores16%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10NElectric solid-state devices not otherwise provided for6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

B82YSpecific uses or applications of nanostructures1%

H01FMagnets1%

PatentTitleYear

12,471,346Memory array isolation structures2025 12,464,755Integrated circuit, transistor and method of fabricating the same2025 12,464,723Semiconductor memory device with vertical gate line2025 12,419,054Three-dimensional memory array with local line selector2025 12,414,295Semiconductor memory structure and method for forming the same2025 12,406,708Memory device with unipolar selector2025 12,389,607Bipolar selector with independently tunable threshold voltages2025 12,382,639Three-dimensional memory device and method2025 12,376,310Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof2025 12,363,911Semiconductor structure and method for forming thereof2025 12,363,907Memory device comprising conductive pillars2025 12,354,634Transistorless memory cell2025 12,356,628Memory device and method for making same2025 12,349,362High selectivity isolation structure for improving effectiveness of 3D memory fabrication2025 12,342,539Protective liner layers in 3D memory structure2025 12,336,180Memory cell array with increased source bias voltage2025 12,336,183Three-dimensional ferroelectric random access memory devices and methods of forming2025 12,317,541Semiconductor device and manufacturing method thereof2025 12,302,5833D ferroelectric memory2025 12,302,562Semiconductor structure and method of forming the same2025 12,288,820Transistor, integrated circuit, and manufacturing method of transistor2025 12,272,750Memory array channel regions2025 12,266,408Vertical fuse memory in one-time program memory cells2025 12,268,005Semiconductor structure2025 12,218,250Oxide semiconductor transistor structure in 3-d device and methods for forming the same2025 12,219,777Memory array source/drain electrode structures2025 12,219,880Integrated circuit device2025 12,185,5313D NOR type memory array with wider source/drain conductive lines2024 12,178,051Magnetic random access memory and manufacturing method thereof2024 12,176,022Programming and reading circuit for dynamic random access memory2024 12,150,311Embedded ferroelectric FinFET memory device2024 12,144,182Memory device and method for making same2024 12,137,566Peripheral circuitry under array memory device and method of fabricating thereof2024 12,096,624Semiconductor memory device and method for making the same2024 12,068,245Memory device, semiconductor device, and manufacturing method thereof2024 12,069,863Method of forming memory device comprising conductive pillars2024 12,069,958Semiconductor device2024 12,058,860Memory device2024 12,048,164Memory array and operation method thereof2024 12,035,534Three-dimensional memory array with local line selector2024 11,990,169Transistorless memory cell2024 11,925,030Method for forming a MFMIS memory device2024 11,910,733Generating self-aligned heater for PCRAM using filaments2024 11,903,213Memory device and method for making same2024 11,903,214Three-dimensional ferroelectric random access memory devices and methods of forming2024 11,862,726Transistor, integrated circuit, and manufacturing method of transistor2024 11,856,775Flash memory structure and method of forming the same2023 11,856,781Three-dimensional memory device and method2023 11,856,779Semiconductor device, memory array and method of forming the same2023 11,832,450Embedded ferroelectric FinFET memory device2023 11,818,882Vertical fuse memory in one-time program memory cells2023 11,805,658Magnetic random access memory and manufacturing method thereof2023 11,800,718Semiconductor memory device with gate line passing through source/drain, channel and dielectric layers over via2023 11,800,703Vertical fuse memory in one-time program memory cells2023 11,792,999Bipolar selector with independently tunable threshold voltages2023 11,785,779Method for forming a semiconductor memory structure using a liner layer as an etch stop2023 11,770,9353D ferroelectric memory2023 11,729,988Memory device comprising conductive pillars and method of forming the same2023 11,729,987Memory array source/drain electrode structures2023 11,729,983Peripheral circuitry under array memory device and method of fabricating thereof2023 11,721,747Integrated circuit, transistor and method of fabricating the same2023 11,723,210High selectivity isolation structure for improving effectiveness of 3D memory fabrication2023 11,721,767Oxide semiconductor transistor structure in 3-D device and methods of forming the same2023 11,723,199Protective liner layers in 3D memory structure2023 11,710,790Memory array channel regions2023 11,696,448Memory device and method of forming the same2023 11,683,988Semiconductor device2023 11,672,123Three-dimensional memory array with local line selector2023 11,640,974Memory array isolation structures2023 11,569,165Memory cell array, semiconductor device including the same, and manufacturing method thereof2023 11,545,201Memory device with unipolar selector2023 11,545,507Memory device and method for making same2023 11,508,753Embedded ferroelectric FinFET memory device2022 11,437,393Semiconductor device, memory array and method of forming the same2022 11,424,406Generating self-aligned heater for PCRAM using filaments2022 11,411,0253D ferroelectric memory2022 11,404,476Bipolar selector with independently tunable threshold voltages2022 11,189,658Magnetic random access memory and manufacturing method thereof2021 11,171,157Method for forming a MFMIS memory device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (79)· patent assignee history

2021–2025Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	79	2021–2025

Locations

Location	Patents	Span
TW	79	2021–2025