Inventor
Russell T. Herrin
Inventor
Essex Junction, VT, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices12%
B81BMicrostructural devices or systems, e.g. micromechanical devices12%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems12%
G06FElectric digital data processing11%
H01HElectric switches11%
H10NElectric solid-state devices not otherwise provided for11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
Y10TTechnical subjects covered by former us classification11%
H10DInorganic electric semiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
11,021,364Planar cavity MEMS and related structures, methods of manufacture and design structures202110,906,803Planar cavity MEMS and related structures, methods of manufacture and design structures202110,414,646Planar cavity MEMS and related structures, methods of manufacture and design structures201910,173,889Planar cavity MEMS and related structures, methods of manufacture and design structures201910,093,537Planar cavity MEMS and related structures, methods of manufacture and design structures20189,890,039'Planar cavity MEMS and related structures, methods of manufacture and design structures'20189,862,598'Planar cavity MEMS and related structures, methods of manufacture and design structures'20189,815,690'Planar cavity MEMS and related structures, methods of manufacture and design structures'20179,764,944'Planar cavity MEMS and related structures, methods of manufacture and design structures'20179,493,343'Planar cavity MEMS and related structures, methods of manufacture and design structures'20169,406,472'Planar cavity MEMS and related structures, methods of manufacture and design structures'20169,397,174'Self-aligned gate electrode diffusion barriers'20169,330,856'Methods of manufacture for micro-electro-mechanical system (MEMS)'20168,956,903'Planar cavity MEMS and related structures, methods of manufacture and design structures'20158,932,920'Self-aligned gate electrode diffusion barriers'20158,916,952'Self-aligned emitter-base in advanced BiCMOS technology'20148,796,130'Diffusion barrier for oppositely doped portions of gate conductor'20148,796,058'Semiconductor structure'20148,716,096'Self-aligned emitter-base in advanced BiCMOS technology'20148,673,726'Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor'20148,513,084'Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor'20138,405,186'Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure'20138,039,356'Through silicon via lithographic alignment and registration'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2021Patents assigned to IBM (22)· patent assignee history
2011–2021Based in Essex Junction, VT, US· patent location history
2013–2016Patents assigned to HERRIN RUSSELL T (8)· patent assignee history
2013–2014Patents assigned to HARAME DAVID L (3)· patent assignee history
2014–2016Patents assigned to STAMPER ANTHONY K (4)· patent assignee history
2016–2019Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 22 | 2011–2021 |
| HERRIN RUSSELL Tself | 8 | 2013–2016 |
| STAMPER ANTHONY K | 4 | 2014–2016 |
| GLOBALFOUNDRIES INC | 3 | 2016–2019 |
| HARAME DAVID L | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Essex Junction, VT, US | 23 | 2011–2021 |