Inventor

Naohiro Momma

Inventor

Hitachi, JP

Overview

23→

Patents

1981–2005

Patent span

Electricity

Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices23%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H05KPrinted circuits6%

C23CCoating metallic material4%

H01JElectric discharge tubes or discharge lamps4%

H05HPlasma technique4%

H10BElectronic memory devices4%

B01DSeparation2%

PatentTitleYear

6,892,582'Semiconductor pressure sensor and pressure sensing device'2005 6,661,659'Water cooled inverter'2003 6,621,701'Water cooled inverter'2003 6,353,258'Semiconductor module'2002 5,883,403'Power semiconductor device'1999 5,726,488'Semiconductor device having semiconductor elements formed in a retrograde well structure'1998 5,433,788'Apparatus for plasma treatment using electron cyclotron resonance'1995 5,294,811'Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device'1994 RE034158'Complementary semiconductor device'1993 5,084,355'Laminar structure comprising organic material and inorganic material'1992 4,963,973'Semiconductor device'1990 4,956,693'Semiconductor device'1990 4,894,801'Stacked MOS transistor flip-flop memory cell'1990 4,879,041'Process for producing ultra-pure water and process for using said ultra-pure water'1989 4,876,983'Plasma operation apparatus'1989 4,862,240'Complementary semiconductor device'1989 4,794,445'Semiconductor device'1988 4,772,927'Thin film FET doped with diffusion inhibitor'1988 4,735,916'Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors'1988 4,682,199'High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer'1987 4,415,385'Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel'1983 4,402,001'Semiconductor element capable of withstanding high voltage'1983 4,266,990'Process for diffusion of aluminum into a semiconductor'1981

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1981–2003Patents assigned to HITACHI LTD (21)· patent assignee history

1981–2005Based in Hitachi, JP· patent location history

1989Patents assigned to HITACHI SERVCE ENGINEERING CO (1)· patent assignee history

1995Patents assigned to HITACHI SERVICE ENG (1)· patent assignee history

2002–2005Patents assigned to HITACHI CAR ENG CO LTD (2)· patent assignee history

2003Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	21	1981–2003
HITACHI CAR ENG CO LTD	2	2002–2005
HITACHI SERVCE ENGINEERING CO	1	1989
HITACHI SERVICE ENG	1	1995

Locations

Location	Patents	Span
Hitachi, JP	21	1981–2005
Tokyo, JP	2	2003