Inventor
Eric Hermanson
Inventor
Georgetown, MA, US
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps47%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01LSemiconductor devices6%
H01BCables5%
H05HPlasma technique5%
G01BMeasuring length, thickness or similar linear dimensions3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
B01DSeparation2%
B08BCleaning in general2%
F04BPositive-displacement machines for liquids2%
PatentTitleYear
11,114,277Dual cathode ion source202111,049,691Ion beam quality control using a movable mass resolving device202111,011,343High-current ion implanter and method for controlling ion beam using high-current ion implanter202110,886,098Electrostatic filter and ion implanter having asymmetric electrostatic configuration202110,867,772Electrostatic element having grooved exterior surface202010,741,361Dual cathode ion source202010,643,823Foam in ion implantation system202010,504,682Conductive beam optic containing internal heating element201910,446,372Dual cathode ion source201910,410,844RF clean system for electrostatic elements201910,157,763High throughput substrate handling endstation and sequence201810,119,529Cryopump arrangement for improved pump speed20189,978,554Dual cathode ion source20189,613,778'Connector for process chamber electrostatic elements'20179,484,183'Linkage conduit for vacuum chamber applications'20169,008,740'Techniques for protecting a superconducting (SC) tape'20158,698,108'Ion beam measurement system and method'20148,481,960'Deceleration lens'20138,455,760'Interfacing two insulation parts in high voltage environment'20138,143,604'Insulator system for a terminal structure of an ion implantation system'20127,863,520'Interfacing two insulation parts in high voltage environment'20117,863,531'Techniques for making high voltage connections'20117,842,934'Terminal structures of an ion implanter having insulated conductors with dielectric fins'20107,799,999'Insulated conducting device with multiple insulation segments'20107,576,337'Power supply for an ion implantation system'20097,482,598'Techniques for preventing parasitic beamlets from affecting ion implantation'20097,476,878'Techniques for reducing effects of photoresist outgassing'20097,402,816'Electron injection in ion implanter magnets'20087,394,073'Methods and apparatus for ion beam angle measurement in two dimensions'20087,250,617'Ion beam neutral detection'20077,202,483'Methods and apparatus for ion beam angle measurement in two dimensions'20077,170,067'Ion beam measurement apparatus and method'20076,791,097'Adjustable conductance limiting aperture for ion implanters'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2015Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (17)· patent assignee history
2004Based in Tewksbury, MA, US· patent location history
2007–2015Patents assigned to HERMANSON ERIC D (2)· patent assignee history
2007–2021Based in Georgetown, MA, US· patent location history
2012–2013Patents assigned to HERMANSON ERIC (3)· patent assignee history
2016–2021Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (13)· patent assignee history
2021Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT | 17 | 2004–2015 |
| VARIAN SEMICONDUCTOR EQUIPMENT ASS INC | 13 | 2016–2021 |
| HERMANSON ERICself | 3 | 2012–2013 |
| APPLIED MATERIALS INC | 2 | 2021 |
| HERMANSON ERIC Dself | 2 | 2007–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Georgetown, Massachusetts, US | 32 | 2007–2021 |
| Tewksbury, Massachusetts, US | 1 | 2004 |