Inventor

Kent D. Choquette

Inventor

Urbana, IL, US

Overview

1993–2013

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light59%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%

B82YSpecific uses or applications of nanostructures7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

C30BSingle-crystal growth4%

H10HInorganic light-emitting semiconductor devices having potential barriers4%

PatentTitleYear

8,494,018'Direct modulated modified vertical-cavity surface-emitting lasers and method'2013 7,965,751'Direct modulated modified vertical cavity surface emitting lasers'2011 7,085,301'Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser'2006 6,931,042'Long wavelength vertical cavity surface emitting laser'2005 6,608,846'Bistable laser device with multiple coupled active vertical-cavity resonators'2003 6,600,761'Semiconductor laser with multiple lasing wavelengths'2003 6,567,454'Coupled-resonator vertical-cavity lasers with two active gain regions'2003 6,258,615'Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy'2001 5,903,590'Vertical-cavity surface-emitting laser device'1999 5,712,865'Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof'1998 5,559,053'Vertical cavity semiconductor laser'1996 5,493,577'Efficient semiconductor light-emitting device and method'1996 5,348,912'Semiconductor surface emitting laser having enhanced optical confinement'1994 5,345,462'Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity'1994 5,316,968'Method of making semiconductor surface emitting laser'1994 5,275,687'Process for removing surface contaminants from III-V semiconductors'1994 5,212,701'Semiconductor surface emitting laser having enhanced optical confinement'1993 5,212,702'Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–1994Patents assigned to AT & T BELL LAB (6)· patent assignee history

1993–1994Based in New Providence, NJ, US· patent location history

1994–2001Based in Albuquerque, NM, US· patent location history

1996–2005Patents assigned to SANDIA CORP (8)· patent assignee history

2003–2013Based in Urbana, IL, US· patent location history

2013Patents assigned to BRENNER MARY K (1)· patent assignee history

2013Patents assigned to CHEN CHEN (1)· patent assignee history

2013Patents assigned to CHOQUETTE KENT D (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SANDIA CORP	8	1996–2005
AT & T BELL LAB	6	1993–1994
BRENNER MARY K	1	2013
CHEN CHEN	1	2013
CHOQUETTE KENT Dself	1	2013

Locations

Location	Patents	Span
Urbana, Illinois, US	7	2003–2013
Albuquerque, NM, US	7	1994–2001
New Providence, New Jersey, US	4	1993–1994