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Inventor

Mou S. Lin

Inventor
Hsinchu, TW

Overview

2→
Patents
1996–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1033%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests33%
PatentTitleYear
8,384,189'High performance system-on-chip using post passivation process'20135,480,828'Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
1996–2013Based in Hsinchu, TW· patent location history
2013Patents assigned to LIN MOU-SHING (1)· patent assignee history
2013Patents assigned to MEGICA CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LIN MOU-SHINGself12013
MEGICA CORP12013
TAIWAN SEMICONDUCTOR MFG11996
Locations
LocationPatentsSpan
Hsinchu, TW21996–2013