Inventor
CHING-FENG FU
Inventor
TW
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10BElectronic memory devices3%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
12,527,071Metal gate structure cutting process202612,501,679Interconnect structures for semiconductor devices and methods of manufacturing the same202512,495,598Semiconductor device and manufacturing method thereof202512,477,821Semiconductor device having air spacers202512,471,357Semiconductor device and method202512,382,654Semiconductor devices202512,336,236Semiconductor device isolation features202512,310,051Fin field-effect transistor device having contact plugs with re-entrant profile202512,293,947Gap patterning for metal-to-source/drain plugs in a semiconductor device202512,272,731Middle-of-line interconnect structure and manufacturing method202512,268,027Middle-of-line interconnect structure and manufacturing method202512,211,937Field effect transistor device with air gap spacer in source/drain contact202512,148,622Semiconductor devices202412,142,532Interconnect structures for semiconductor devices and methods of manufacturing the same202412,119,231Semiconductor device and method202412,094,768Method for sealing a seam, semiconductor structure, and method for manufacturing the same202412,009,429Semiconductor device and method202412,009,258Self-aligned interconnect with protection layer202411,935,920Semiconductor device and method202411,916,147Fin field-effect transistor device having contact plugs with re-entrant profile202411,888,064Semiconductor device and method202411,854,814Semiconductor device and method202311,842,930Gap patterning for metal-to-source/drain plugs in a semiconductor device202311,769,770Methods of forming a semiconductor device having an air spacer202311,757,010Multi-stage etching process for contact formation in a semiconductor device202311,735,667Semiconductor device and method202311,728,218Semiconductor device and method202311,715,777Semiconductor device and method202311,694,931Metal gate structure cutting process202311,626,326Interconnect structures for semiconductor devices and methods of manufacturing the same202311,545,546Semiconductor device and method202311,532,712Interconnect structures for semiconductor devices and methods of manufacturing the same202211,515,165Semiconductor device and method202211,398,385Semiconductor device and method202211,380,794Fin field-effect transistor device having contact plugs with re-entrant profile202211,355,637Semiconductor device and method202211,355,399Gap patterning for metal-to-source/drain plugs in a semiconductor device2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (37)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 37 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 37 | 2022–2026 |