Inventor
Kazuyoshi Mizutani
Inventor
Shizuoka, JP
Overview
Patents· 71 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices46%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds4%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds3%
Y10TTechnical subjects covered by former us classification2%
B41CProcesses for the manufacture or reproduction of printing surfaces1%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients1%
C08LCompositions of macromolecular compounds1%
C09DCoating compositions, e.g. paints, varnishes or lacquers1%
PatentTitleYear
10,126,653Pattern forming method and resist composition20189,929,376'Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor'20189,709,892'Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same'20179,551,935'Pattern forming method and resist composition'20178,785,104'Resist composition and pattern forming method using the same'20148,603,733'Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method'20138,349,535'Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith'20138,142,977'Positive resist composition and pattern forming method using the same'20128,092,977'Positive resist composition and pattern forming method using the same'20128,084,187'Resist composition and pattern forming method using the same'20118,034,547'Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method'20118,017,304'Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method'20117,989,137'Resist composition and pattern-forming method using the same'20117,923,196'Positive resist composition and pattern forming method using the same'20117,887,988'Positive resist composition and pattern forming method using the same'20117,807,329'Photosensitive composition and pattern-forming method using the same'20107,645,557'Positive resist composition for immersion exposure and pattern forming method using the same'20107,625,690'Positive resist composition and pattern forming method using the same'20097,592,118'Positive resist composition and pattern forming method using the same'20097,521,168'Resist composition for electron beam, EUV or X-ray'20097,374,860'Positive resist composition and pattern forming method using the same'20087,344,821'Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same'20087,335,454'Positive resist composition'20087,326,513'Positive working resist composition'20087,250,246'Positive resist composition and pattern formation method using the same'20077,232,640'Positive resist composition'20077,217,493'Positive resist composition'20077,214,467'Photosensitive resin composition'20077,202,015'Positive photoresist composition and pattern making method using the same'20077,198,880'Positive resist composition'20077,195,856'Positive resist composition and pattern formation method using the same'20077,163,776'Positive-working resist composition'20077,160,666'Photosensitive resin composition'20077,157,208'Positive resist composition and pattern forming method using the same'20077,147,987'Positive resist composition and pattern formation method using the same'20067,138,217'Positive resist composition'20067,108,951'Photosensitive resin composition'20067,105,273'Positive resist composition'20067,083,892'Resist composition'20066,939,662'Positive-working resist composition'20056,902,862'Resist composition'20056,878,502'Positive resist composition'20056,852,467'Positive resist composition'20056,830,871'Chemical amplification type resist composition'20046,830,872'Planographic printing plate precursor provided with an image forming layer containing a fluorine macromolecular compound'20046,811,947'Positive resist composition'20046,808,869'Bottom anti-reflective coating material composition and method for forming resist pattern using the same'20046,777,161'Lower layer resist composition for silicon-containing two-layer resist'20046,743,565'Positive resist composition with (bis-tri fluoromethyl) methyl substituted styrene'20046,727,040'Positive resist composition to be irradiated with one of an electron beam and X-ray'20046,589,705'Positive-working photoresist composition'20036,555,289'Positive photoresist composition'20036,506,535'Positive working photoresist composition'20036,479,213'Positive photoresist composition'20026,399,269'Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern using the same'20026,387,590'Positive photoresist composition'20026,346,363'Positive photoresist composition'20026,296,985'Positive photoresist composition comprising a polysiloxane'20016,248,500'Composition for anti-reflective coating material'20016,165,684'Bottom anti-reflective coating material composition and method for forming resist pattern using the same'20006,132,935'Negative-working image recording material'20006,090,531'Compostion for anti-reflective coating material'20005,488,182'Phenol compounds containing methoxymethyl group or hydroxymethyl group'19965,460,917'Positive working photosensitive lithographic printing plate utilizing phenol derivative compound containing photosensitive composition'19955,338,640'Siloxane polymers and positive working light-sensitive compositions comprising the same'19945,278,273'Siloxane polymers and positive working light-sensitive compositions comprising the same'19945,276,124'Siloxane polymers and positive working light-sensitive compositions comprising the same'19945,252,686'Siloxane polymers and positive working light-sensitive compositions comprising the same'19935,216,105'Silicone polymers and positive working light-sensitive compositions comprising the same'19935,143,816'Light-sensitive composition comprising a polysiloxane and a naphthoquinone'19925,141,840'Light-sensitive composition containing onium salt and polysiloxane reaction product'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2007Patents assigned to FUJI PHOTO FILM CO LTD (41)· patent assignee history
1992–2018Based in Shizuoka, JP· patent location history
2007–2018Patents assigned to FUJIFILM CORP (29)· patent assignee history
2011–2018Patents assigned to MIZUTANI KAZUYOSHI (9)· patent assignee history
2011–2018Patents assigned to TSUCHIHASHI TORU (5)· patent assignee history
2011–2017Based in Haibara-gun, JP· patent location history
2013–2018Patents assigned to FUJII KANA (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJI PHOTO FILM CO LTD | 41 | 1992–2007 |
| FUJIFILM CORP | 29 | 2007–2018 |
| MIZUTANI KAZUYOSHIself | 9 | 2011–2018 |
| TSUCHIHASHI TORU | 5 | 2011–2018 |
| FUJII KANA | 4 | 2013–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shizuoka, JP | 67 | 1992–2018 |
| Haibara-gun, JP | 4 | 2011–2017 |