Inventor
Hitoshi Akamine
Inventor
Maebashi, JP
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H03Fprimary
H03FAmplifiers27%
H03GControl of amplification23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices15%
H04BTransmission11%
H01PWaveguides2%
G11BInformation storage based on relative movement between record carrier and transducer1%
H04NPictorial communication, e.g. television1%
PatentTitleYear
11,050,455Radio-frequency signal sending/receiving circuit and radio-frequency signal sending/receiving device20218,115,234'Semiconductor device'20128,022,537'Semiconductor device'20117,650,133'Semiconductor integrated circuit device and high frequency power amplifier module'20107,595,694'Electronics parts for high frequency power amplifier'20097,439,622'Semiconductor device'20087,395,036'Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit'20087,352,244'Electronics parts for high frequency power amplifier'20087,271,662'High frequency power amplifier circuit and electric component for high frequency power amplifier'20077,173,492'High frequency power amplification electric part and wireless communication system'20077,145,394'High frequency power amplifier module, and wireless communication system'20067,141,876'Semiconductor device'20067,139,538'Electronic component for amplifying high frequency power and radio communication system'20067,064,612'High frequency power amplification electric part and wireless communication system'20067,050,769'Electronic apparatus and design method'20066,992,528'Semiconductor device'20066,989,600'Integrated circuit device having reduced substrate size and a method for manufacturing the same'20066,972,627'High frequency power amplifier module'20056,972,640'Directional coupler, high frequency circuit module and wireless communication system'20056,972,626'High frequency power amplification electric part and wireless communication system'20056,919,762'High frequency power amplifier electric parts and radio telecommunication system'20056,900,694'High frequency power amplifier module and wireless communication apparatus'20056,897,728'High frequency power amplifier module and wireless communication system'20056,765,268'Multiple transistors having a common gate pad between first group of drains and second group of drains'20046,731,167'High frequency power amplifier module and wireless communication apparatus'20046,658,243'High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages'20036,617,927'High frequency power amplifier module, and wireless communications system'20036,605,999'High-frequency power amplifier, wireless communication apparatus and wireless communication system'20036,483,398'Directional coupler, high frequency circuit module and wireless communication system'20026,463,267'High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages'20026,433,639'High frequency power amplifier module and wireless communication system'20026,329,879'High frequency power amplifier system and wireless communication system'20015,075,803'Signal discriminating device for VTR having expanded dynamic range'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2003Patents assigned to HITACHI LTD (8)· patent assignee history
1991Based in Takasaki, JP· patent location history
2001–2006Patents assigned to HITACHI TOBU SEMICONDUCTOR LTD (7)· patent assignee history
2001–2005Patents assigned to HITACHI ULSI SYS CO LTD (3)· patent assignee history
2001Based in Komoro, JP· patent location history
2002–2011Based in Maebashi, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (16)· patent assignee history
2005–2007Patents assigned to HITACHI HYBRID NETWORK CO LTD (2)· patent assignee history
2010–2012Based in Tokyo, JP· patent location history
2021Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS TECH CORP | 16 | 2004–2010 |
| HITACHI LTD | 8 | 1991–2003 |
| HITACHI TOBU SEMICONDUCTOR LTD | 7 | 2001–2006 |
| HITACHI ULSI SYS CO LTD | 3 | 2001–2005 |
| HITACHI HYBRID NETWORK CO LTD | 2 | 2005–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Maebashi, JP | 28 | 2002–2011 |
| Tokyo, JP | 2 | 2010–2012 |
| Kyoto, JP | 1 | 2021 |
| Komoro, JP | 1 | 2001 |
| Takasaki, JP | 1 | 1991 |