Inventor
Ji Eon Yoon
Inventor
Hwaseong-si, KR
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
10,269,962Semiconductor device and method for manufacturing the same201910,014,173Single semiconductor crystal structure having an improved structure for crystalline lattice mismatch, semiconductor device and method of manufacturing same201810,008,600Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations20189,761,719'Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
2017–2019Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 4 | 2017–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 4 | 2017–2019 |