Inventor
Ramon Ubaldo Martinelli
Inventor
Hightstown, NJ, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light16%
H10DInorganic electric semiconductor devices16%
C07DHeterocyclic compounds13%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light13%
H04NPictorial communication, e.g. television13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G01SRadio direction-finding3%
H01JElectric discharge tubes or discharge lamps3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
7,477,670'High power diode laser based source'20096,839,371'Combined single-frequency laser and linear amplifier'20056,713,862'Low temperature co-fired ceramic-metal packaging technology'20046,535,275'High resolution 3-D imaging range finder'20036,498,347'Infrared imager using room temperature capacitance sensor'20026,455,930'Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology'20026,249,001'Infrared imager using room temperature capacitance sensor'20016,133,520'Heterojunction thermophotovoltaic cell'20005,965,886'Infrared imager using room temperature capacitance sensor'19995,844,238'Infrared imager using room temperature capacitance sensor'19985,802,090'Room temperature diode laser emitting in the 2-5 micrometer wavelength range'19984,918,508'Vertical photoconductive detector'19904,761,680'Photodetector'19884,605,948'Semiconductor structure for electric field distribution'19864,455,565'Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode'19844,383,268'High-current, high-voltage semiconductor devices having a metallurgical grade substrate'19834,225,874'Semiconductor device having integrated diode'19804,019,082'Electron emitting device and method of making the same'19774,005,451'Lateral current device'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–1986Patents assigned to RCA CORP (6)· patent assignee history
1977–2009Based in Hightstown, NJ, US· patent location history
1988–1990Patents assigned to GEN ELECTRIC (2)· patent assignee history
1998Patents assigned to SARNOFF DAVID RES CENTER (2)· patent assignee history
1999–2009Patents assigned to SARNOFF CORP (6)· patent assignee history
2003Patents assigned to DIALOG SEMICONDUCTOR GMBH (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RCA CORP | 6 | 1977–1986 |
| SARNOFF CORP | 6 | 1999–2009 |
| GEN ELECTRIC | 2 | 1988–1990 |
| SARNOFF DAVID RES CENTER | 2 | 1998 |
| DIALOG SEMICONDUCTOR GMBH | 1 | 2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hightstown, New Jersey, US | 19 | 1977–2009 |