Inventor
Brent A. Wacaser
Inventor
Putnam Valley, NY, US
Overview
Patents· 55 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
B82YSpecific uses or applications of nanostructures4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
H01JElectric discharge tubes or discharge lamps4%
G06KGraphical data reading2%
G06TImage data processing or generation, in general2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
11,003,942Electron channeling pattern acquisition from small crystalline areas202110,777,665III-V and Zn based finFET structure formed using low temperature deposition techniques202010,763,340Growing Groups III-V lateral nanowire channels202010,755,925Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films202010,714,303Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy202010,615,178Dual-material mandrel for epitaxial crystal growth on silicon202010,460,937Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films201910,453,683Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films201910,431,956Nanocavity monolayer laser monolithically integrated with LED pump201910,431,672Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques201910,417,519Electron channeling pattern acquisition from small crystalline areas201910,319,838III-V fin generation by lateral growth on silicon sidewall201910,157,993Low resistance contact for semiconductor devices201810,127,649Electron channeling pattern acquisition from small crystalline areas201810,103,242Growing groups III-V lateral nanowire channels201810,096,697III-V FIN generation by lateral growth on silicon sidewall201810,068,994III-V fin generation by lateral growth on silicon sidewall201810,043,920Highly responsive III-V photodetectors using ZnO:Al as n-type emitter201810,043,663Enhanced defect reduction for heteroepitaxy by seed shape engineering201810,038,057Junction interlayer dielectric for reducing leakage current in semiconductor devices201810,002,929Reduction of defect induced leakage in III-V semiconductor devices20189,972,688Post growth defect reduction for heteroepitaxial materials20189,935,175Sidewall spacer for integration of group III nitride with patterned silicon substrate20189,905,637'Reduction of defect induced leakage in III-V semiconductor devices'20189,859,091'Automatic alignment for high throughput electron channeling contrast imaging'20189,859,397'Growing groups III-V lateral nanowire channels'20189,799,747'Low resistance contact for semiconductor devices'20179,754,969'Dual-material mandrel for epitaxial crystal growth on silicon'20179,748,412'Highly responsive III-V photodetectors using ZnO:Al as N-type emitter'20179,741,532'Multi-beam electron microscope for electron channeling contrast imaging of semiconductor material'20179,739,728'Automatic defect detection and classification for high throughput electron channeling contrast imaging'20179,698,239'Growing groups III-V lateral nanowire channels'20179,653,570'Junction interlayer dielectric for reducing leakage current in semiconductor devices'20179,647,063'Nanoscale chemical templating with oxygen reactive materials'20179,583,562'Reduction of defect induced leakage in III-V semiconductor devices'20179,564,494'Enhanced defect reduction for heteroepitaxy by seed shape engineering'20179,553,153'Post growth defect reduction for heteroepitaxial materials'20179,527,107'Method and apparatus to apply material to a surface'20169,496,422'Multi-element packaging of concentrator photovoltaic cells'20169,412,891'Thermal receiver for high power solar concentrators and method of assembly'20169,401,397'Reduction of defect induced leakage in III-V semiconductor devices'20169,397,005'Dual-material mandrel for epitaxial crystal growth on silicon'20169,349,591'Crystal formation on non-lattice matched substrates'20169,324,896'Thermal receiver for high power solar concentrators and method of assembly'20169,231,139'Structure and design of concentrator solar cell assembly receiver substrate'20169,082,687'Nanoscale chemical templating with oxygen reactive materials'20159,018,082'Nanoscale chemical templating with oxygen reactive materials'20158,834,963'Method for applying material to a surface'20148,683,611'High resolution AFM tips containing an aluminum-doped semiconductor nanowire'20148,659,110'Single-junction photovoltaic cell'20148,633,097'Single-junction photovoltaic cell'20148,574,946'Multi-element packaging of concentrator photovoltaic cells'20138,474,061'Production scale fabrication method for high resolution AFM tips'20138,349,715'Nanoscale chemical templating with oxygen reactive materials'20138,321,961'Production scale fabrication method for high resolution AFM tips'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2021Patents assigned to IBM (53)· patent assignee history
2012–2016Patents assigned to WACASER BRENT A (10)· patent assignee history
2012–2015Patents assigned to KHAYYAT MAHA M (6)· patent assignee history
2012–2014Patents assigned to COHEN GUY (3)· patent assignee history
2012–2017Based in Garrison, NY, US· patent location history
2013–2017Patents assigned to KING ABDULAZIZ CITY SCI & TECH (6)· patent assignee history
2014Based in Yorktown Heights, NY, US· patent location history
2016–2021Based in Putnam Valley, NY, US· patent location history
2018Based in Putnam, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 53 | 2012–2021 |
| WACASER BRENT Aself | 10 | 2012–2016 |
| KHAYYAT MAHA M | 6 | 2012–2015 |
| KING ABDULAZIZ CITY SCI & TECH | 6 | 2013–2017 |
| COHEN GUY | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Putnam Valley, New York, US | 37 | 2016–2021 |
| Garrison, New York, US | 14 | 2012–2017 |
| Putnam, New York, US | 2 | 2018 |
| Yorktown Heights, New York, US | 2 | 2014 |