Inventor
Shinsuke Sakashita
Inventor
Tokyo, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices71%
C30BSingle-crystal growth14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
PatentTitleYear
8,293,632'Manufacturing method of semiconductor device'20128,120,118'Semiconductor device and manufacturing method of the same'20127,855,134'Semiconductor device and manufacturing method of the same'20107,741,201'Semiconductor device and method of manufacturing a gate stack'20107,030,000'Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006Based in Nagoya, JP· patent location history
2010–2012Patents assigned to RENESAS ELECTRONICS CORP (3)· patent assignee history
2010–2012Based in Tokyo, JP· patent location history
2010Based in Chiyoda-ku, JP· patent location history
2012Patents assigned to KAWAHARA TAKAAKI (2)· patent assignee history
2012Patents assigned to SAKASHITA SHINSUKE (2)· patent assignee history
2012Patents assigned to YUGAMI JIRO (2)· patent assignee history
2012Patents assigned to KADOSHIMA MASARU (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 3 | 2010–2012 |
| KAWAHARA TAKAAKI | 2 | 2012 |
| SAKASHITA SHINSUKEself | 2 | 2012 |
| YUGAMI JIRO | 2 | 2012 |
| KADOSHIMA MASARU | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 3 | 2010–2012 |
| Chiyoda-ku, JP | 1 | 2010 |
| Nagoya, JP | 1 | 2006 |