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Inventor

Kyosuke Ogawa

Inventor
Tokyo, JP

Overview

65→
Patents
1983–2019
Patent span
Physics
Primary field (CPC G)

Patents· 65 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Gprimary
G03GElectrography39%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation14%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
Y02PClimate change mitigation technologies in the production or processing of goods8%
C23CCoating metallic material6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
Y10TTechnical subjects covered by former us classification5%
B24CAbrasive or related blasting with particulate material3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them1%
PatentTitleYear
10,247,405Light source unit, projector, and method of assembling a light source unit20199,929,646'Charge pump circuit and step-down regulator circuit'20189,513,538'Projector, support plate and projection method of projector'20167,867,671'Photo-mask having phase and non-phase shifter parts for patterning an insulated gate transistor'20115,910,342'Process for forming deposition film'19995,645,947'Silicon-containing deposited film'19975,009,974'Surface-treated metal body, process for producing the same, photoconductive member using the same and rigid ball for treating metal body surface'19914,939,057'Surface-treated metal body, process for producing the same, photoconductive member using the same and rigid ball for treating metal body surface'19904,876,185'Aluminum support for a photoconductive member'19894,834,501'Light receiving member having a light receiving layer of a-Si(Ge,Sn)(H,X) and a-Si(H,X) layers on a support having spherical dimples with inside faces having minute irregularities'19894,835,005'Process for forming deposition film'19894,808,504'Light receiving members with spherically dimpled support'19894,798,776'Light receiving members with spherically dimpled support'19894,797,299'Light receiving member having a-Si (Ge,Sn) photosensitive layer and a-Si (O,C,N) surface layer on a support having spherical dimples with inside faces having minute irregularities'19894,797,327'Surface treated metal member, preparation method thereof and photoconductive member by use thereof'19894,797,336'Light receiving member having a-Si(GE,SN) photosensitive layer and multi-layered surface layer containing reflection preventive layer and abrasion resistant layer on a support having spherical dimples with inside faces having minute irregularities'19894,795,688'Layered photoconductive member comprising amorphous silicon'19894,773,244'Apparatus for producing a substrate for a photoconductive members'19884,762,762'Electrophotographic light receiving members comprising amorphous silicon and substrate having minute irregularities'19884,740,440'Amorphous silicon multilayered photosensitive element containing spherical-dimpled substrate surface'19884,735,883'Surface treated metal member, preparation method thereof and photoconductive member by use thereof'19884,732,834'Light receiving members'19884,721,664'Silicon film deposition from mixture of silanes'19884,720,443'Member having light receiving layer with nonparallel interfaces'19884,705,731'Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer'19874,705,730'Light-receiving member'19874,705,734'Member having substrate with irregular surface and light receiving layer of amorphous silicon'19874,705,732'Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon'19874,705,733'Member having light receiving layer and substrate with overlapping subprojections'19874,705,735'Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix'19874,702,981'Photoconductive member and support for said photoconductive member'19874,701,393'Member with light receiving layer of A-SI(GE) and A-SI and having plurality of non-parallel interfaces'19874,701,392'Member having light receiving layer with nonparallel interfaces and antireflection layer'19874,696,883'Member having light receiving layer with smoothly connected non-parallel interfaces and surface reflective layer'19874,696,884'Member having photosensitive layer with series of smoothly continuous non-parallel interfaces'19874,696,881'Member having light receiving layer with smoothly connected interfaces'19874,696,882'Member having light receiving layer with smoothly interconnecting nonparallel interfaces'19874,687,722'Image holder member with overlayer of amorphous Si with H and C'19874,678,733'Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces'19874,675,263'Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate'19874,666,734'Apparatus and process for mass production of film by vacuum deposition'19874,650,736'Light receiving member having photosensitive layer with non-parallel interfaces'19874,637,342'Vacuum processing apparatus'19874,637,972'Light receiving member having an amorphous silicon photoconductor'19874,636,450'Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions'19874,592,985'Photoconductive member having amorphous silicon layers'19864,568,626'Method for producing image forming member'19864,555,465'Photoconductive member of amorphous silicon'19854,547,448'Photoconductive member comprising silicon and oxygen'19854,536,459'Photoconductive member having multiple amorphous layers'19854,529,679'Photoconductive member'19854,522,905'Amorphous silicon photoconductive member with interface and rectifying layers'19854,501,807'Photoconductive member having an amorphous silicon layer'19854,490,454'Photoconductive member comprising multiple amorphous layers'19844,486,521'Photoconductive member with doped and oxygen containing amorphous silicon layers'19844,483,911'Photoconductive member with amorphous silicon-carbon surface layer'19844,468,443'Process for producing photoconductive member from gaseous silicon compounds'19844,465,750'Photoconductive member with a -Si having two layer regions'19844,460,669'Photoconductive member with .alpha.-Si and C, U or D and dopant'19844,460,670'Photoconductive member with .alpha.-Si and C, N or O and dopant'19844,452,874'Photoconductive member with multiple amorphous Si layers'19844,452,875'Amorphous photoconductive member with .alpha.-Si interlayers'19844,450,185'Process for forming amorphous silicon film'19844,423,133'Photoconductive member of amorphous silicon'19834,405,656'Process for producing photoconductive member'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–1999Patents assigned to CANON KK (61)· patent assignee history
1983–2019Based in Tokyo, JP· patent location history
1983–1987Based in Sakurashin, JP· patent location history
1984–1997Based in Sakurashinmachi, JP· patent location history
1985Patents assigned to KANBE JUNICHIRO (1)· patent assignee history
1985Patents assigned to MISUMI TERUO (1)· patent assignee history
1988–1989Based in Miye, JP· patent location history
1988–1991Based in Nabari, JP· patent location history
2011–2018Patents assigned to TOSHIBA KK (2)· patent assignee history
2016–2019Patents assigned to CASIO COMPUTER CO LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CANON KK611983–1999
CASIO COMPUTER CO LTD22016–2019
TOSHIBA KK22011–2018
KANBE JUNICHIRO11985
MISUMI TERUO11985
Locations
LocationPatentsSpan
Tokyo, JP381983–2019
Miye, JP91988–1989
Sakurashin, JP71983–1987
Nabari, JP41988–1991
Sakurashinmachi, JP31984–1997