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Inventor

Shijin Ding

Inventor
Shanghai, CN

Overview

3→
Patents
2015–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices22%
C23CCoating metallic material11%
H10BElectronic memory devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
10,612,140Method and corresponding reactor for preparing metal nitrides with adjustable metal contents20208,994,095'Semiconductor memory device with a buried drain and its memory array'20158,932,929'Thin film transistor memory and its fabricating method'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2020Patents assigned to UNIV FUDAN (3)· patent assignee history
2015Patents assigned to DING SHIJIN (2)· patent assignee history
2015Patents assigned to WANG PENGFEI (2)· patent assignee history
2015Patents assigned to ZHANG WEI (2)· patent assignee history
2015Patents assigned to CHEN SUN (1)· patent assignee history
2015–2020Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV FUDAN32015–2020
DING SHIJINself22015
WANG PENGFEI22015
ZHANG WEI22015
CHEN SUN12015
Locations
LocationPatentsSpan
Shanghai, CN32015–2020