LexDanaLexDanabeta
Inventor

Yoshiyuki Yamamoto

Inventor
Itami, JP

Overview

81→
Patents
1984–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
C30BSingle-crystal growth11%
Y10TTechnical subjects covered by former us classification11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H05KPrinted circuits5%
H01JElectric discharge tubes or discharge lamps4%
H01LSemiconductor devices4%
H10DInorganic electric semiconductor devices4%
C08LCompositions of macromolecular compounds4%
C23CCoating metallic material4%
PatentTitleYear
10,822,693Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate202010,600,676Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device202010,487,395Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate201910,270,023Thermoelectric material, thermoelectric module, optical sensor, and method for manufacturing thermoelectric material201910,029,286Wiper and method of manufacturing the same20189,923,063'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20189,917,004'Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device'20189,184,228'Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer'20158,962,365'Method of manufacturing GaN-based film and composite substrate used therefor'20158,829,658'Method of manufacturing nitride substrate, and nitride substrate'20148,748,890'Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method'20148,697,564'Method of manufacturing GaN-based film'20148,697,550'Method of manufacturing GaN-based film'20148,658,527'Method of manufacturing GaN-based film'20148,658,517'Method of manufacturing GaN-based film'20148,653,561'III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device'20148,613,802'Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal'20138,497,185'Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method'20138,367,577'Thin film of aluminum nitride and process for producing the thin film of aluminum nitride'20138,363,326'AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens'20138,323,402'Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal'20128,294,245'GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture'20128,259,386'Wavelength conversion element and method for manufacturing wavelength conversion element'20128,119,241'Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film'20127,995,267'Wavelength converter manufacturing method and wavelength converter'20117,955,434'Diamond single crystal substrate'20117,902,734'Electron emission element and electron emission element fabrication method'20117,898,161'Diamond electron radiation cathode, electron source, electron microscope, and electron beam exposer'20117,892,356'Diamond composite substrate and process for producing the same'20117,863,805'Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device'20117,821,795'Multilayer wiring board'20107,807,126'Diamond single crystal substrate'20107,771,693'Diamond single crystal substrate manufacturing method'20107,737,614'Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device'20107,667,977'Mounting board, mounted body, and electronic equipment using the same'20107,655,208'Single crystalline diamond and producing method thereof'20107,615,203'Single crystal diamond'20097,524,372'Method for manufacturing diamond single crystal substrate'20097,481,879'Diamond single crystal substrate manufacturing method and diamond single crystal substrate'20097,407,549'Diamond single crystal composite substrate and method for manufacturing the same'20087,395,190'Analytical model producing method and analytical model producing apparatus'20087,390,695'Diamond substrate and manufacturing method thereof'20087,390,692'Semiconductor device and method for manufacturing the same'20087,294,587'Component built-in module and method for producing the same'20077,157,789'Semiconductor device and method for manufacturing the same'20077,141,884'Module with a built-in semiconductor and method for producing the same'20067,132,756'Semiconductor device and method for manufacturing the same'20067,018,866'Circuit component built-in module with embedded semiconductor chip and method of manufacturing'20066,975,516'Component built-in module and method for producing the same'20056,855,892'Insulation sheet, multi-layer wiring substrate and production processes thereof'20056,784,530'Circuit component built-in module with embedded semiconductor chip and method of manufacturing'20046,716,917'Rubber-reinforced styrene transparent resin composition and method of producing the same'20046,641,861'Heatsink and fabrication method thereof'20036,483,040'Package and method of manufacturing the same'20026,361,857'Heatsink and fabrication method thereof'20026,335,863'Package for semiconductors, and semiconductor module that employs the package'20026,316,826'Semiconductor mounting package'20016,129,145'Heat dissipator including coolant passage and method of fabricating the same'20006,103,401'Window for an optical use and a process for the production of the same'20005,886,198'Method for continuously producing a cyclic formal'19995,878,110'X-ray generation apparatus'19995,791,045'Process for the production of a diamond heat sink'19985,788,766'Window and preparation thereof'19985,785,754'Substrate, semiconductor device, element-mounted device and preparation of substrate'19985,745,362'Digital PID control apparatus'19985,717,214'X-ray beam position monitor and its position measurement method'19985,682,063'Substrate for semiconductor device'19975,677,372'Diamond reinforced composite material'19975,657,365'X-ray generation apparatus'19975,642,779'Heat sink and a process for the production of the same'19975,499,601'Method for vapor phase synthesis of diamond'19965,310,823'Polyacetal resin composition'19945,225,497'Process for continuous production of elastic polyesters'19935,152,256'Air-liquid cooled engine'19925,138,697'Graphic data conversion method'19925,079,330'Polyoxymethylene multi-copolymer and its resin composition'19924,751,272'Process for producing oxymethylene copolymer and resinous composition'19884,622,263'Water absorbing webs'19864,587,309'Process for producing polyetheresteramides'19864,461,871'Polyester resinous composition, molded articles and process for preparation thereof'19844,456,719'Flame retarding thermoplastic polyester'1984

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1984–2004Patents assigned to TORAY INDUSTRIES (10)· patent assignee history
1984–2004Based in Suzuka, JP· patent location history
1992–1998Based in Tokyo, JP· patent location history
1996–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (53)· patent assignee history
1996–2020Based in Itami, JP· patent location history
1997–2012Based in Hyogo, JP· patent location history
2004–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (9)· patent assignee history
2004–2008Based in Neyagawa, JP· patent location history
2012–2015Patents assigned to YAMAMOTO YOSHIYUKI (14)· patent assignee history
2012–2015Patents assigned to SATOH ISSEI (9)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES531996–2020
YAMAMOTO YOSHIYUKIself142012–2015
TORAY INDUSTRIES101984–2004
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD92004–2008
SATOH ISSEI92012–2015
Locations
LocationPatentsSpan
Itami, JP521996–2020
Neyagawa, JP82004–2008
Suzuka, JP81984–2004
Hyogo, JP31997–2012
Tokyo, JP21992–1998