Inventor
JI-YIN TSAI
Inventor
TW
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
B82YSpecific uses or applications of nanostructures13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
12,588,258Stacked transistor isolation features and methods of forming the same202612,550,418Etch stop layer for removal of substrate in stacking transistors and methods of forming the same202612,324,190Method and multi-channel devices with anti-punch-through features202512,255,102Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration202512,159,925Semiconductor device and method202412,068,395Method for forming an undoped region under a source/drain202411,862,709Inner spacer structure and methods of forming such202411,616,133Fin field-effect transistor device and method202311,437,497Semiconductor device and method202211,316,030Fin field-effect transistor device and method2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (10)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 10 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 10 | 2022–2026 |