Inventor
SHUNFU CHEN
Inventor
CN
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
G11CStatic stores6%
PatentTitleYear
12,389,611Structure and method for forming capacitors for a three-dimensional NAND202511,437,464Structure and method for forming capacitors for a three-dimensional NAND202211,270,770Local word line driver device, memory device, and fabrication method thereof202211,264,455Backside deep isolation structures for semiconductor device arrays2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to YANGTZE MEMORY TECH CO LTD (4)· patent assignee history
2022–2025Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 4 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 4 | 2022–2025 |