Inventor

Chien-Hsien Tseng

Inventor

Hsinchu, TW

Overview

49→

Patents

2001–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation50%

H01LSemiconductor devices23%

H10DInorganic electric semiconductor devices8%

H04NPictorial communication, e.g. television5%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%

G02BOptical elements, systems or apparatus1%

G03BApparatus or arrangements for taking photographs or for projecting or viewing them1%

H03HImpedance networks, e.g. resonant circuits1%

PatentTitleYear

10,867,891Ion through-substrate via2020 10,797,096Semiconductor image sensor2020 10,672,812Image sensor2020 10,651,225Band-pass filter for stacked sensor2020 10,651,220Narrow band filter with high transmission2020 10,510,797Semiconductor image sensor2019 10,510,794Semiconductor image sensor2019 10,510,788Semiconductor image sensor2019 10,510,795Semiconductor image sensor2019 10,367,023Semiconductor image sensor2019 10,347,675Image sensor and image processing method using the same2019 10,074,680Image sensor with low step height between back-side metal and pixel array2018 10,002,899Microlens for a phase detection auto focus (PDAF) pixel of a composite grid structure2018 9,893,111'Full-PDAF (phase detection autofocus) CMOS image sensor structures'2018 9,871,070'Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors'2018 9,609,239'Infrared image sensor'2017 9,564,468'Composite grid structure to reduce crosstalk in back side illumination image sensors'2017 9,437,645'Composite grid structure to reduce cross talk in back side illumination image sensors'2016 9,299,740'Image sensor with low step height between back-side metal and pixel array'2016 9,299,734'Methods of stress engineering to reduce dark current of CMOS image sensors'2016 9,257,463'Self-aligned implantation process for forming junction isolation regions'2016 9,196,646'Method for reducing crosstalk in image sensors using implant technology'2015 9,093,343'Image sensor device and method for making same'2015 8,546,860'Stress engineering to reduce dark current of CMOS image sensors'2013 8,440,495'Method for reducing crosstalk in image sensors using implant technology'2013 8,389,377'Sensor element isolation in a backside illuminated image sensor'2013 8,324,700'Image sensor device and method for making same'2012 8,216,905'Stress engineering to reduce dark current of CMOS image sensors'2012 8,124,495'Semiconductor device having enhanced photo sensitivity and method for manufacture thereof'2012 8,054,371'Color filter for image sensor'2011 7,649,231'Asymmetrical reset transistor with double-diffused source for CMOS image sensor'2010 7,553,689'Semiconductor device with micro-lens and method of making the same'2009 7,507,596'Method of fabricating a high quantum efficiency photodiode'2009 7,479,403'Pinned photodiode integrated with trench isolation and fabrication method'2009 7,443,005'Lens structures suitable for use in image sensors and method for making the same'2008 7,432,576'Grid metal design for large density CMOS image sensor'2008 7,423,306'CMOS image sensor devices'2008 7,332,368'Light guide for image sensor'2008 7,232,697'Semiconductor device having enhanced photo sensitivity and method for manufacture thereof'2007 7,145,190'Pinned photodiode integrated with trench isolation and fabrication method'2006 7,038,232'Quantum efficiency enhancement for CMOS imaging sensor with borderless contact'2006 6,815,787'Grid metal design for large density CMOS image sensor'2004 6,707,080'Method for making spectrally efficient photodiode structures for CMOS color imagers'2004 6,642,076'Asymmetrical reset transistor with double-diffused source for CMOS image sensor'2003 6,531,752'Stripe photodiode element with high quantum efficiency for an image sensor cell'2003 6,518,085'Method for making spectrally efficient photodiode structures for CMOS color imagers'2003 6,372,603'Photodiode with tightly-controlled junction profile for CMOS image sensor with STI process'2002 6,323,054'Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor'2001 6,309,905'Stripe photodiode element with high quantum efficiency for an image sensor cell'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (28)· patent assignee history

2001–2020Based in Hsinchu, TW· patent location history

2009Based in Hsin Chu, TW· patent location history

2012–2016Patents assigned to TSENG CHIEN-HSIEN (8)· patent assignee history

2012–2016Patents assigned to WUU SHOU-GWO (6)· patent assignee history

2012–2013Patents assigned to CHENG NAI-WEN (3)· patent assignee history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (18)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	28	2001–2016
TAIWAN SEMICONDUCTOR MFG CO LTD	18	2016–2020
TSENG CHIEN-HSIENself	8	2012–2016
WUU SHOU-GWO	6	2012–2016
CHENG NAI-WEN	3	2012–2013

Locations

Location	Patents	Span
Hsinchu, TW	48	2001–2020
Hsin Chu, TW	1	2009