Inventor
Richard H. Womack
Inventor
Albuquerque, NM, US
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores43%
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices15%
G05FSystems for regulating electric or magnetic variables5%
F24J3%
F24SSolar heat collectors3%
G02BOptical elements, systems or apparatus3%
H03FAmplifiers3%
H03KPulse technique3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
9,347,688'Tracking solar mirror system'20168,023,308'Non-volatile memory circuit using ferroelectric capacitor storage element'20118,018,754'Non-volatile memory circuit using ferroelectric capacitor storage element'20117,924,599'Non-volatile memory circuit using ferroelectric capacitor storage element'20117,672,151'Method for reading non-volatile ferroelectric capacitor memory cell'20107,345,906'Read method and sensing device'20087,193,881'Cross-point ferroelectric memory that reduces the effects of bit line to word line shorts'20077,020,005'Non-switching pre- and post- disturb compensational pulses'20066,788,563'Sensing device for a passive matrix memory and a read method for use therewith'20046,117,688'Method for constructing ferroelectric based capacitor for use in memory systems'20006,014,053'Amplifier MOS biasing circuit for a avoiding latch-up'20005,923,583'Ferromagnetic memory based on torroidal elements'19995,923,212'Bias generator for a low current divider'19995,892,255'Ferroelectric based capacitor for use in memory systems and method for fabricating the same'19995,872,739'Sense amplifier for low read-voltage memory cells'19995,864,498'Ferromagnetic memory using soft magnetic material and hard magnetic material'19995,804,850'Ferroelectric based capacitor cell for use in memory systems'19985,789,775'High density memory and double word ferroelectric memory cell for constructing the same'19985,757,042'High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same'19985,679,969'Ferroelectric based capacitor for use in memory systems and method for fabricating the same'19975,541,807'Ferroelectric based capacitor for use in memory systems and method for fabricating the same'19965,434,811'Non-destructive read ferroelectric based memory circuit'19954,800,525'Dual ended folded bit line arrangement and addressing scheme'19894,750,839'Semiconductor memory with static column decode and page mode addressing capability'19884,713,678'dRAM cell and method'19874,704,705'Two transistor DRAM cell and array'19874,581,552'Power-up clear circuitry having two thresholds'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–1989Patents assigned to TEXAS INSTRUMENTS INC (5)· patent assignee history
1986–1989Based in Dallas, TX, US· patent location history
1995–2011Patents assigned to NAT SEMICONDUCTOR CORP (3)· patent assignee history
1995–2016Based in Albuquerque, NM, US· patent location history
1997–2000Patents assigned to RADIANT TECHNOLOGIES INC (4)· patent assignee history
1998–1999Patents assigned to RADIANT TECHNOLOGIES (3)· patent assignee history
2004–2008Patents assigned to THIN FILM ELECTRONICS ASA (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 5 | 1986–1989 |
| RADIANT TECHNOLOGIES INC | 4 | 1997–2000 |
| THIN FILM ELECTRONICS ASA | 4 | 2004–2008 |
| NAT SEMICONDUCTOR CORP | 3 | 1995–2011 |
| RADIANT TECHNOLOGIES | 3 | 1998–1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Albuquerque, NM, US | 22 | 1995–2016 |
| Dallas, Texas, US | 5 | 1986–1989 |