Inventor

Hitoshi Murayama

Inventor
Kyoto, JP

Overview

29→
Patents
1995–2009
Patent span
Electricity
Primary field (CPC H)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material26%
H01JElectric discharge tubes or discharge lamps23%
G03GElectrography13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation12%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%
Y02PClimate change mitigation technologies in the production or processing of goods9%
H05HPlasma technique2%
B08BCleaning in general1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
7,550,180'Plasma treatment method'20097,051,671'Vacuum processing apparatus in which high frequency powers having mutually different frequencies are used to generate plasma for processing an article'20066,946,167'Deposited film forming apparatus and deposited film forming method'20056,861,373'Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode'20056,849,123'Plasma processing method and method for manufacturing semiconductor device'20056,761,128'Plasma treatment apparatus'20046,702,898'Deposited film forming apparatus'20046,696,108'Vacuum processing method'20046,649,020'Plasma processing apparatus'20036,486,045'Apparatus and method for forming deposited film'20026,443,191'Vacuum processing methods'20026,435,130'Plasma CVD apparatus and plasma processing method'20026,413,592'Apparatus for forming a deposited film by plasma chemical vapor deposition'20026,350,497'Plasma processing method'20026,347,601'Film forming apparatus'20026,336,423'Apparatus for forming a deposited film by plasma chemical vapor deposition'20026,321,759'Method for cleaning a substrate'20016,300,225'Plasma processing method'20016,250,251'Vacuum processing apparatus and vacuum processing method'20016,165,274'Plasma processing apparatus and method'20006,155,201'Plasma processing apparatus and plasma processing method'20006,148,763'Deposited film forming apparatus'20005,817,181'Process for forming deposited film for light-receiving member, light-received member produced by the process deposited film forming apparatus, and method for cleaning deposited film forming apparatus'19985,766,811'Method of manufacturing amorphous silicon electrophotographic photosensitive member'19985,631,727'Image forming apparatus having discharging means using light source actuated prior to latent image formation'19975,516,611'Light-receiving member and methods of producing light-receiving member'19965,512,510'Method of manufacturing amorphous silicon electrophotographic photosensitive member'19965,455,138'Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus'19955,392,098'Electrophotographic apparatus with amorphous silicon-carbon photosensitive member driven relative to light source'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2009Patents assigned to CANON KK (29)· patent assignee history
1995–2001Based in Soraku-gun, JP· patent location history
1995–1997Based in Nagahama, JP· patent location history
1996–2005Based in Kyoto, JP· patent location history
2000–2002Based in Nishikamo-gun, JP· patent location history
2002–2009Based in Shizuoka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CANON KK291995–2009
Locations
LocationPatentsSpan
Kyoto, JP121996–2005
Shizuoka, JP82002–2009
Soraku-gun, JP41995–2001
Nishikamo-gun, JP32000–2002
Nagahama, JP21995–1997