Inventor
Hung-Ta Lin
Inventor
Hsinchu, TW
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H01LSemiconductor devices20%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures3%
C23CCoating metallic material2%
A61KPreparations for medical, dental or toiletry purposes1%
A61QSpecific use of cosmetics or similar toiletry preparations1%
C30BSingle-crystal growth1%
PatentTitleYear
11,030,465Method for analyzing number of people and system thereof20219,941,394Tunnel field-effect transistor20189,853,102Tunnel field-effect transistor20179,741,800'III-V multi-channel FinFETs'20179,735,261'Semiconductor device and formation thereof'20179,716,091'Fin field effect transistor'20179,660,031'Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursor'20179,478,631'Vertical-gate-all-around devices and method of fabrication thereof'20169,412,836'Contacts for transistors'20169,397,169'Epitaxial structures'20169,379,215'Fin field effect transistor'20169,373,755'Light-emitting diodes on concave texture substrate'20169,356,102'Double stepped semiconductor substrate'20169,224,815'Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impurities'20159,209,300'Fin field effect transistor'20159,184,289'Semiconductor device and formation thereof'20159,166,035'Delta doping layer in MOSFET source/drain region'20159,130,115'Light-emitting diode with textured substrate'20159,099,311'Double stepped semiconductor substrate'20159,099,388'III-V multi-channel FinFETs'20159,029,246'Methods of forming epitaxial structures'20158,822,290'FinFETs and methods for forming the same'20148,809,940'Fin held effect transistor'20148,803,189'III-V compound semiconductor epitaxy using lateral overgrowth'20148,791,504'Substrate breakdown voltage improvement for group III-nitride on a silicon substrate'20148,779,445'Stress-alleviation layer for LED structures'20148,772,831'III-nitride growth method on silicon substrate'20148,659,033'Light-emitting diode with textured substrate'20148,629,465'Light-emitting diodes on concave texture substrate'20148,629,037'Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process'20148,629,013'Junction leakage reduction through implantation'20148,497,177'Method of making a FinFET device'20138,486,730'Method of separating light-emitting diode from a growth substrate'20138,440,517'FinFET and method of fabricating the same'20138,236,583'Method of separating light-emitting diode from a growth substrate'20128,148,732'Carbon-containing semiconductor substrate'20128,134,163'Light-emitting diodes on concave texture substrate'20128,058,082'Light-emitting diode with textured substrate'20117,323,162'Aqueous cosmetic coloring and gloss compositions having film formers'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008Based in Rego Park, NY, US· patent location history
2011–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (24)· patent assignee history
2011–2015Patents assigned to LIN HUNG-TA (15)· patent assignee history
2011–2014Patents assigned to CHEN DING-YUAN (9)· patent assignee history
2011–2014Patents assigned to CHIOU WEN-CHIH (9)· patent assignee history
2011–2014Patents assigned to YU CHEN-HUA (9)· patent assignee history
2011–2018Based in Hsinchu, TW· patent location history
2015Based in Hsinhu, TW· patent location history
2021Based in Changhua County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 24 | 2011–2016 |
| LIN HUNG-TAself | 15 | 2011–2015 |
| CHEN DING-YUAN | 9 | 2011–2014 |
| CHIOU WEN-CHIH | 9 | 2011–2014 |
| YU CHEN-HUA | 9 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 36 | 2011–2018 |
| Changhua County, TW | 1 | 2021 |
| Hsinhu, TW | 1 | 2015 |
| Rego Park, New York, US | 1 | 2008 |