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Inventor

Kenichi Osada

Inventor
Tokyo, JP

Overview

139→
Patents
1999–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 139 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores33%
H10BElectronic memory devices15%
H10DInorganic electric semiconductor devices13%
G06FElectric digital data processing8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H03KPulse technique5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H01LSemiconductor devices3%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use2%
G01RMeasuring electric variables2%
PatentTitleYear
11,016,928Microcomputer and logic circuit202110,903,735Semiconductor integrated circuit device and power supply device202110,573,376Lower-power semiconductor memory device202010,484,202Relay device, electronic control device, and vehicle-mounted network system201910,454,722In-vehicle processing device and in-vehicle system201910,446,224Semiconductor SRAM circuit having a plurality of MOSFETS controlling ground potential201910,397,022Gateway device and computing device201910,229,732Semiconductor device20199,985,038Semiconductor integrated circuit device20189,973,074Semiconductor integrated circuit device20189,928,900'Low power semiconductor memory device'20189,922,698'Semiconductor memory device having a plurality of mosfets controlled to be in an active state or a standby state'20189,831,770Boost regulator with reduced inductor current noise20179,823,882'Semiconductor device and information processing device'20179,754,659'Low-power semiconductor device'20179,658,631'Semiconductor integrated circuit device, power supply device, and method of controlling power supply device'20179,646,678'Semiconductor integrated circuit device'20179,530,485'Semiconductor integrated circuit device with reduced leakage current'20169,449,678'Semiconductor integrated circuit device'20169,318,397'Stacked semiconductor chips including test circuitry'20169,286,968'Semiconductor integrated circuit device including SRAM cell array and a wiring layer for supplying voltage to well regions of SRAM cells provided on a region exterior of SRAM cell array'20169,214,221'Semiconductor device with logic circuit, SRAM circuit and standby state'20159,111,636'Semiconductor integrated circuit device with reduced leakage current'20159,087,822'Semiconductor device'20158,908,345'Semiconductor device'20148,867,262'Semiconductor memory device'20148,797,791'Semiconductor integrated circuit device with reduced leakage current'20148,711,607'Semiconductor device'20148,653,645'Semiconductor device comprising stacked LSI having circuit blocks connected by power supply and signal line through vias'20148,633,684'Detection system, semiconductor device, and data processing device'20148,531,872'Semiconductor integrated circuit and manufacturing method thereof'20138,508,968'Semiconductor apparatus'20138,493,775'Semiconductor device'20138,482,083'Semiconductor integrated circuit device including SRAM memory cells having two P-channel MOS transistors and four N-channel MOS transistors and with four wiring layers serving as their gate electrodes'20138,451,050'Information technology equipment'20138,437,179'Semiconductor integrated circuit device with reduced leakage current'20138,350,409'Semiconductor device and information processing apparatus using the same'20138,270,230'Semiconductor device'20128,264,870'Semiconductor memory device'20128,253,227'Semiconductor integrated circuit device'20128,242,589'Semiconductor device'20128,232,589'Semiconductor integrated circuit device with reduced leakage current'20128,184,463'Semiconductor apparatus'20128,148,814'Semiconductor integrated circuit device comprising a plurality of semiconductor chips mounted to stack for transmitting a signal between the semiconductor chips'20128,150,578'Vehicle electronic system and vehicle'20128,125,017'Semiconductor integrated circuit device with reduced leakage current'20128,125,837'Semiconductor memory device with read/write margin control using back-gate bias'20128,116,100'Semiconductor device'20128,107,279'Semiconductor integrated circuit and manufacturing method therefor'20128,054,871'Semiconductor device and semiconductor integrated circuit'20118,030,956'Method of on-chip current measurement and semiconductor IC'20118,031,511'Semiconductor device'20117,994,623'Semiconductor device with offset stacked integrated circuits'20117,994,822'Semiconductor device for synchronous communication between stacked LSI'20117,964,484'Semiconductor integrated circuit device with reduced leakage current'20117,961,545'Semiconductor device'20117,954,023'Semiconductor integrated circuit including power domains'20117,920,438'Semiconductor memory device having the operating voltage of the memory cell controlled'20117,911,221'Semiconductor device with speed performance measurement'20117,907,435'Semiconductor device'20117,899,643'Semiconductor integrated circuit device'20117,849,237'Semiconductor integrated circuit and semiconductor device with the same'20107,821,814'Semiconductor memory device'20107,812,628'Method of on-chip current measurement and semiconductor IC'20107,781,846'Semiconductor integrated circuit device'20107,778,069'Semiconductor device and its fabrication method'20107,737,509'Semiconductor integrated circuit device'20107,710,764'Semiconductor memory cells with shared p-type well'20107,692,943'Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells'20107,646,197'Semiconductor integrated circuit device and power consumption control device'20107,646,662'Semiconductor device'20107,612,417'Semiconductor integrated circuit device'20097,609,544'Programmable semiconductor memory device'20097,609,545'Semiconductor device'20097,596,013'Semiconductor integrated circuit and manufacturing method therefor'20097,589,993'Semiconductor memory device with memory cells operated by boosted voltage'20097,569,881'Semiconductor integrated circuit device with reduced leakage current'20097,542,357'Semiconductor device'20097,529,874'Semiconductor integrated circuit device for real-time processing'20097,498,637'Semiconductor memory'20097,474,584'Semiconductor device'20097,443,721'Semiconductor integrated device'20087,428,164'Semiconductor memory device'20087,420,838'Semiconductor device'20087,408,231'SRAM memory semiconductor integrated circuit device'20087,406,643'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20087,397,693'Semiconductor memory device with memory cells operated by boosted voltage'20087,388,238'Semiconductor integrated circuit device with reduced leakage current'20087,385,838'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20087,379,328'Semiconductor device'20087,336,526'Semiconductor device'20087,333,385'Semiconductor memory device having the operating voltage of the memory cell controlled'20087,319,603'Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells'20087,272,068'Semiconductor device'20077,251,157'Semiconductor device'20077,224,599'Semiconductor device'20077,219,272'Semiconductor integrated circuit with memory redundancy circuit'20077,206,216'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20077,200,030'Semiconductor memory device'20077,190,609'Semiconductor memory device with memory cells operated by boosted voltage'20077,180,768'Semiconductor memory device including 4TSRAMs'20077,099,183'Semiconductor device'20067,087,942'Semiconductor integrated circuit device with reduced leakage current'20067,038,961'Semiconductor device'20066,998,674'Semiconductor integrated circuit device with reduced leakage current'20066,977,858'Semiconductor device'20056,954,396'Semiconductor memory device having the operating voltage of the memory cell controlled'20056,953,975'Semiconductor integrated circuit device'20056,940,739'Semiconductor memory device'20056,914,803'Low-power semiconductor memory device'20056,885,057'Semiconductor integrated circuit device with reduced leakage current'20056,862,227'Semiconductor memory device having the operating voltage of the memory cell controlled'20056,839,268'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20056,795,332'Semiconductor memory device with memory cells operated by boosted voltage'20046,782,499'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20046,781,202'Semiconductor devices and their fabrication methods'20046,756,814'Logic circuit and semiconductor device'20046,753,231'Semiconductor integrated circuit and method for manufacturing the same'20046,683,353'Semiconductor integrated circuit device'20046,677,649'SRAM cells with two P-well structure'20046,665,209'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20036,657,911'Semiconductor device with low power consumption memory circuit'20036,563,180'Semiconductor integrated circuit device'20036,560,141'Semiconductor integrated circuit with memory redundancy circuit'20036,559,006'Semiconductor integrated circuit and method for manufacturing the same'20036,525,985'Semiconductor memory device'20036,522,565'Semiconductor storage device'20036,515,894'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20036,496,952'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20026,436,753'Semiconductor integrated circuit and method for manufacturing the same'20026,424,015'Semiconductor integrated circuit device'20026,396,732'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20026,353,569'Semiconductor memory device'20026,345,010'Semiconductor storage device'20026,295,218'Semiconductor device'20016,212,117'Duplicate bitline self-time technique for reliable memory operation'20016,091,629'High speed semiconductor memory apparatus including circuitry to increase writing and reading speed'20006,058,038'Semiconductor device'20005,943,284'Semiconductor memory device'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2017Patents assigned to HITACHI LTD (51)· patent assignee history
1999–2005Based in Kokubunji, JP· patent location history
2000–2003Based in San Jose, CA, US· patent location history
2002–2011Patents assigned to HITACHI ULSI SYS CO LTD (14)· patent assignee history
2002–2020Based in Kawasaki, JP· patent location history
2003–2010Patents assigned to RENESAS TECH CORP (37)· patent assignee history
2005–2021Based in Tokyo, JP· patent location history
2010–2021Patents assigned to RENESAS ELECTRONICS CORP (41)· patent assignee history
2012–2016Patents assigned to OSADA KENICHI (25)· patent assignee history
2019–2021Based in Hitachinaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD511999–2017
RENESAS ELECTRONICS CORP412010–2021
RENESAS TECH CORP372003–2010
OSADA KENICHIself252012–2016
HITACHI ULSI SYS CO LTD142002–2011
Locations
LocationPatentsSpan
Tokyo, JP632005–2021
Kawasaki, JP552002–2020
Kokubunji, JP121999–2005
San Jose, California, US42000–2003
Hitachinaka, JP32019–2021