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Inventor

Haihan HUNG

Inventor
CN

Overview

3→
Patents
2024
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices30%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices20%
H10NElectric solid-state devices not otherwise provided for10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
12,148,790Capacitor structure and manufacturing method thereof, and memory202411,895,821Semiconductor structure and manufacturing method thereof202411,869,802Method of forming semiconductor isolation structure and semiconductor isolation structure2024

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2024Patents assigned to CHANGXIN MEMORY TECH INC (3)· patent assignee history
2024Based in CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CHANGXIN MEMORY TECH INC32024
Locations
LocationPatentsSpan
CN32024