Inventor
SHOJI IKEDA
Inventor
JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices20%
G11CStatic stores18%
H10NElectric solid-state devices not otherwise provided for18%
H01LSemiconductor devices13%
H10DInorganic electric semiconductor devices11%
H01FMagnets9%
B21BRolling of metal1%
C22CAlloys1%
C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys1%
C23CCoating metallic material1%
PatentTitleYear
12,520,732Tunnel junction laminated film, magnetic memory element, and magnetic memory202612,402,537Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element202512,402,326Magnetic film, magnetoresistance effect element and magnetic memory202512,371,813Silicon wafer and method for producing silicon wafer202512,325,908Platinum-based sputtering target, and method for producing the same202512,236,988Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system202511,963,458Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory202411,770,981Magnetoresistive element and magnetic memory202311,765,981Magnetoresistance effect element and magnetic memory202311,631,804Magnetoresistive effect element and magnetic memory202311,610,614Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device202311,563,169Magnetic tunnel junction element and magnetic memory202311,532,667Magnetic laminated film, magnetic memory element, and magnetic memory202211,468,932Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array202211,462,253Magnetoresistance effect element and magnetic memory202211,430,498Magnetoresistance effect element, magnetic memory array, magnetic memory device, and write method for magnetoresistance effect element202211,417,378Integrated circuit device202211,264,565Magnetoresistance effect element and magnetic memory202211,258,006Magnetic memory element, method for producing same, and magnetic memory2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to UNIV TOHOKU (19)· patent assignee history
2022–2026Based in JP· patent location history
2025Patents assigned to GLOBALWAFERS JAPAN CO LTD (1)· patent assignee history
2025Patents assigned to TANAKA KIKIZOKU KOGYO K K (1)· patent assignee history
2025Patents assigned to TANAKA PRECIOUS METAL IND (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV TOHOKU | 19 | 2022–2026 |
| GLOBALWAFERS JAPAN CO LTD | 1 | 2025 |
| TANAKA KIKIZOKU KOGYO K K | 1 | 2025 |
| TANAKA PRECIOUS METAL IND | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 19 | 2022–2026 |