LexDanaLexDanabeta
Inventor

GABOR MEZOESI

Inventor
AT

Overview

2→
Patents
2022
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
11,374,125Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad202211,329,126Method of manufacturing a superjunction semiconductor device2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (2)· patent assignee history
2022Based in AT· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AUSTRIA AG22022
Locations
LocationPatentsSpan
AT22022