Inventor

Shaw-Hung Ku

Inventor
Hsinchu, TW

Overview

19→
Patents
2007–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores29%
H10BElectronic memory devices24%
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices15%
G06FElectric digital data processing6%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
11,037,632Multi-tier 3D memory and erase method thereof202110,796,753Method and system to determine quick pass write operation in increment step pulse programming operation202010,644,0183D memory having plural lower select gates202010,460,797Method for programming non-volatile memory and memory system201910,340,017Erase-verify method for three-dimensional memories and memory system20199,859,007'Non-volatile memory device having multiple string select lines'20189,620,603'Semiconductor device with a P-N junction for reduced charge leakage and method of manufacturing the same'20179,589,982'Structure and method of operation for improved gate capacity for 3D NOR flash memory'20179,548,121'Memory device having only the top poly cut'20179,524,784'Device and method for improved threshold voltage distribution for non-volatile memory'20169,437,612'Three-dimensional memory'20168,859,364'Manufacturing method of non-volatile memory'20148,664,710'Non-volatile memory and manufacturing method thereof'20148,466,508'Non-volatile memory structure including stress material between stacked patterns'20137,971,177'Design tool for charge trapping memory using simulated programming operations'20117,889,556'Flash memory having insulating liners between source/drain lines and channels'20117,668,010'Flash memory having insulating liners between source/drain lines and channels'20107,439,085'Method and apparatus for electroluminescence'20087,301,818'Hole annealing methods of non-volatile memory cells'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2021Patents assigned to MACRONIX INT CO LTD (19)· patent assignee history
2007–2020Based in Taipei, TW· patent location history
2013–2014Patents assigned to KU SHAW-HUNG (2)· patent assignee history
2013Patents assigned to CHEN MING-SHANG (1)· patent assignee history
2013Patents assigned to HAN TZUNG-TING (1)· patent assignee history
2013Patents assigned to LEE SHIH-CHIN (1)· patent assignee history
2013–2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MACRONIX INT CO LTD192007–2021
KU SHAW-HUNGself22013–2014
CHEN MING-SHANG12013
HAN TZUNG-TING12013
LEE SHIH-CHIN12013
Locations
LocationPatentsSpan
Hsinchu, TW112013–2021
Taipei, TW82007–2020