Inventor
Tristan Ma
Inventor
Lexington, MA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices22%
H01JElectric discharge tubes or discharge lamps12%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices11%
C23CCoating metallic material7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C23FNon-mechanical removal of metallic material from surface4%
H10DInorganic electric semiconductor devices4%
B24BMachines, devices, or processes for grinding or polishing1%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,553,448Techniques for processing a polycrystalline layer using an angled ion beam202010,545,408Performance improvement of EUV photoresist by ion implantation202010,310,379Multiple patterning approach using ion implantation201910,269,663Critical dimensions variance compensation201910,222,202Three dimensional structure fabrication control using novel processing system201910,204,909Non-uniform gate oxide thickness for DRAM device201910,002,764Sputter etch material selectivity20189,929,015'High efficiency apparatus and method for depositing a layer on a three dimensional structure'20189,885,957'Ion-assisted deposition and implantation of photoresist to improve line edge roughness'20189,735,013'Ion implantation for improved contact hole critical dimension uniformity'20179,659,784'Ion-assisted deposition and implantation of photoresist to improve line edge roughness'20179,520,290'Ion implantation for improved etch performance'20169,512,517'Multiple exposure treatment for processing a patterning feature'20169,460,961'Techniques and apparatus for anisotropic metal etching'20169,435,038'Ion implant assisted metal etching'20169,396,965'Techniques and apparatus for anisotropic metal etching'20169,385,219'Method and apparatus for selective deposition'20169,377,692'Electric/magnetic field guided acid diffusion'20169,336,998'Apparatus and method for dynamic control of ion beam energy and angle'20169,268,228'Techniques for patterning a substrate'20168,906,576'Material engineering for high performance Li-ion battery electrodes'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2016Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (4)· patent assignee history
2014Patents assigned to DARBY BLAKE L (1)· patent assignee history
2014Patents assigned to GODET LUDOVIC (1)· patent assignee history
2014–2020Based in Lexington, MA, US· patent location history
2016–2020Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (15)· patent assignee history
2016Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT ASS INC | 15 | 2016–2020 |
| VARIAN SEMICONDUCTOR EQUIPMENT | 4 | 2014–2016 |
| APPLIED MATERIALS INC | 2 | 2016 |
| DARBY BLAKE L | 1 | 2014 |
| GODET LUDOVIC | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Lexington, Massachusetts, US | 21 | 2014–2020 |