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Inventor

Tatsuya Kishi

Inventor
Yokohama, JP

Overview

123→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 123 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores24%
H10NElectric solid-state devices not otherwise provided for19%
H10BElectronic memory devices15%
B82YSpecific uses or applications of nanostructures11%
G11BInformation storage based on relative movement between record carrier and transducer6%
H01FMagnets6%
H01LSemiconductor devices5%
Y10TTechnical subjects covered by former us classification5%
G01RMeasuring electric variables4%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
11,094,743Magnetic memory device202111,074,951Magnetic memory device202110,867,650Magnetic storage device202010,622,545Magnetic memory device and method of manufacturing the same202010,620,368Optical fiber and laser device202010,573,802Magnetic memory device202010,446,739Semiconductor memory device201910,410,704Memory device201910,325,640Magnetoresistive memory device with different write pulse patterns201910,311,929Resistance change memory201910,230,042Magnetoresistive element and method of manufacturing the same201910,193,057Magnetic memory device201910,073,220Optical coupler, laser device, and taper fiber201810,067,287Optical fiber and method of manufacturing the same20189,818,523'Electromagnet, tester and method of manufacturing magnetic memory'20179,799,383'Magnetic memory device'20179,772,444'Optical fiber'20179,739,935'Optical fiber and manufacturing method thereof'20179,678,179'Tester for testing magnetic memory'20179,653,182'Testing method, manufacturing method, and testing device of memory device'20179,570,671'Magnetic memory device'20179,460,316'Authentication device, authentication method, and computer program product'20169,368,717'Magnetoresistive element and method for manufacturing the same'20169,269,889'Semiconductor memory device and manufacturing method thereof'20169,196,822'Magnetoresistive effect element'20159,166,151'Magnetoresistive element and manufacturing method of the same'20159,076,960'Magnetic memory element'20159,042,166'Magnetoresistive effect element and method of manufacturing magnetoresistive effect element'20158,958,239'Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit'20158,895,162'Magnetoresistive element and magnetic memory'20148,884,389'Magnetoresistive element and method of manufacturing the same'20148,878,321'Magnetoresistive element and producing method thereof'20148,716,818'Magnetoresistive element and method of manufacturing the same'20148,686,521'Magnetoresistive element and magnetic memory'20148,634,238'Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof'20148,530,987'Magnetic memory including a magnetoresistive element'20138,378,437'Magnetoresistive effect element and magnetic random access memory'20138,363,462'Magnetoresistive element'20138,299,552'Magnetoresistive element and magnetic memory'20128,279,663'Magnetoresistance effect element and magnetic random access memory'20128,223,533'Magnetoresistive effect device and magnetic memory'20128,218,355'Magnetoresistive element and magnetic memory'20128,154,915'Magnetoresistive element and magnetoresistive random access memory including the same'20128,139,403'Spin memory and spin transistor'20128,139,405'Magnetoresistive element and magnetoresistive random access memory including the same'20128,098,514'Magnetoresistive element and magnetic memory'20128,036,025'Magnetoresistive element'20118,014,193'Magnetoresistance effect element and magnetic random access memory'20118,009,465'Magnetoresistive element'20117,965,544'Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory'20117,957,184'Magnetoresistive element and magnetoresistive random access memory including the same'20117,924,607'Magnetoresistance effect element and magnetoresistive random access memory using the same'20117,920,361'Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc'20117,875,903'Magnetic memory device'20117,869,265'Magnetic random access memory and write method of the same'20117,848,059'Magnetoresistive effect device and magnetic random access memory using the same'20107,848,136'Magnetic memory'20107,787,288'Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory'20107,768,824'Magnetoresistive element and magnetoresistive random access memory including the same'20107,663,197'Magnetoresistive element'20107,633,795'Magnetoresistive random access memory and its write control method'20097,599,156'Magnetoresistive element having specially shaped ferromagnetic layer'20097,596,015'Magnetoresistive element and magnetic memory'20097,593,193'Magnetoresistive element and magnetic memory device'20097,564,109'MRAM and method of manufacturing the same'20097,518,907'Magnetoresistive element'20097,494,724'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20097,470,963'Magnetoresistive element and magnetic memory'20087,411,263'Magnetic memory device'20087,355,884'Magnetoresistive element'20087,355,883'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20087,345,852'Magnetoresistive element and magnetic memory device'20087,333,359'Magnetic random access memory'20087,277,318'Magnetic random access memory and method of manufacturing the same'20077,265,950'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20077,266,011'Magneto-resistance effect element and magnetic memory'20077,247,506'Method for producing magnetic memory device'20077,245,464'Magnetic memory having a ferromagnetic tunneling junction'20077,245,524'Magnetic memory device and write method of magnetic memory device'20077,240,419'Method of manufacturing a magnetoresistance effect element'20077,200,034'Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same'20077,190,613'Magnetic random access memory device having thermal agitation property and high write efficiency'20077,164,599'Data read method of magnetic random access memory'20077,140,096'Method of manufacturing a magnetoresistance effect device'20067,064,402'Magnetic random access memory'20067,054,187'Magnetic memory'20067,041,603'Method for producing magnetic memory device'20067,038,939'Magneto-resistance effect element and magnetic memory'20067,038,894'Magnetoresistive element and magnetic memory device'20067,023,725'Magnetic memory'20067,009,873'Magnetic random access memory'20066,995,962'Ferromagnetic double tunnel junction element with asymmetric energy band'20066,987,653'Magnetoresistive element and magnetic memory device'20066,984,865'Magnetic random access memory'20066,960,815'Magnetic memory device having yoke layer, and manufacturing method thereof'20056,958,932'Semiconductor integrated circuit device and method of manufacturing the same'20056,950,334'Magnetic random access memory having test circuit and test method therefor'20056,949,779'Magnetoresistive element and magnetic memory'20056,947,314'Magnetic random access memory and method of manufacturing the same'20056,937,447'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20056,934,184'Magnetic memory'20056,927,468'Magnetic random access memory'20056,909,130'Magnetic random access memory device having high-heat disturbance resistance and high write efficiency'20056,879,475'Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head'20056,879,515'Magnetic memory device having yoke layer'20056,873,023'Magnetic random access memory'20056,868,002'Magnetic memory with reduced write current'20056,839,206'Ferromagnetic double tunnel junction element with asymmetric energy band'20056,831,857'Magnetic memory'20046,831,855'Magnetic memory'20046,807,094'Magnetic memory'20046,797,536'Magnetic memory device having yoke layer, and manufacturing method'20046,765,821'Magnetic memory'20046,765,824'Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory'20046,751,074'Magnetic memory having antiferromagnetically coupled recording layer'20046,730,949'Magnetoresistance effect device'20046,717,845'Magnetic memory'20046,707,711'Magnetic memory with reduced write current'20046,611,405'Magnetoresistive element and magnetic memory device'20036,605,836'Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information'20036,590,803'Magnetic memory device'20036,556,473'Magnetic memory with reduced write current'20036,069,820'Spin dependent conduction device'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2017Patents assigned to TOSHIBA KK (102)· patent assignee history
2000–2015Based in Kanagawa, JP· patent location history
2003–2020Based in Yokohama, JP· patent location history
2004–2006Based in Tokyo, JP· patent location history
2012–2017Patents assigned to KISHI TATSUYA (22)· patent assignee history
2012–2017Patents assigned to YODA HIROAKI (18)· patent assignee history
2012–2016Patents assigned to NAKAYAMA MASAHIKO (12)· patent assignee history
2016–2021Based in Seongnam-si, KR· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (13)· patent assignee history
2017–2018Based in Sakura, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK1022000–2017
KISHI TATSUYAself222012–2017
YODA HIROAKI182012–2017
TOSHIBA MEMORY CORP132017–2021
NAKAYAMA MASAHIKO122012–2016
Locations
LocationPatentsSpan
Yokohama, JP692003–2020
Kanagawa, JP302000–2015
Seongnam-si, KR162016–2021
Sakura, JP42017–2018
Tokyo, JP22004–2006