Inventor
Ki-Yeon Park
Inventor
Hwaseong-si, KR
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10BElectronic memory devices14%
H01LSemiconductor devices11%
C23CCoating metallic material8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
B82YSpecific uses or applications of nanostructures2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
C03CChemical composition of glasses, glazes or vitreous enamels1%
G05DSystems for controlling or regulating non-electric variables1%
PatentTitleYear
10,797,160Methods of fabricating semiconductor devices202010,685,957Semiconductor devices and methods of manufacturing the same202010,541,127Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices202010,529,555Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor202010,460,927Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor201910,403,739Method for fabricating semiconductor device201910,096,688Integrated circuit device and method of manufacturing the same201810,026,736Semiconductor devices and methods of manufacturing the same20189,859,393'Integrated circuit device and method of fabricating the same'20189,685,450'Semiconductor devices and methods of fabricating the same'20179,559,185'Semiconductor devices and methods of manufacturing the same'20179,390,977'Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation'20169,324,781'Semiconductor devices and methods of fabricating the same'20169,247,403'Method and apparatus for filtering a mobile high-definition link signal'20169,070,981'Multi-layered electromagnetic wave absorber and manufacturing method thereof'20159,059,331'Semiconductor devices and methods of fabricating the same'20158,847,669'Method for controlling temperature of terminal and terminal supporting the same'20148,790,986'Methods of manufacturing semiconductor devices'20148,723,250'Integrated circuit devices including complex dielectric layers and related fabrication methods'20148,710,564'Semiconductor device including insulating layer of cubic system or tetragonal system'20148,361,551'Methods forming high dielectric target layer'20138,357,593'Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same'20138,258,064'Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer'20128,159,012'Semiconductor device including insulating layer of cubic system or tetragonal system'20127,888,727'Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same'20117,800,162'Nonvolatile memory device and method of fabricating the same'20107,646,056'Gate structures of a non-volatile memory device and methods of manufacturing the same'20107,635,633'Non-volatile memory device and method of manufacturing the same'20097,605,067'Method of manufacturing non-volatile memory device'20097,566,608'Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same'20097,560,349'Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same'20097,510,931'Method of fabricating a nonvolatile memory device'20097,425,493'Methods of forming dielectric structures and capacitors'20087,402,491'Methods of manufacturing a semiconductor device including a dielectric layer including zirconium'20087,279,392'Thin film structure, capacitor, and methods for forming the same'20077,151,039'Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same'20067,094,712'High performance MIS capacitor with HfO2 dielectric'20066,946,342'Semiconductor device and method for manufacturing the same'20056,897,106'Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same'20056,720,275'Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure'20046,689,696'Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape'20046,599,807'Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics'20036,555,394'Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure'20036,448,146'Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes'20026,207,489'Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (45)· patent assignee history
2001–2006Based in Yongin, KR· patent location history
2002–2014Based in Seoul, KR· patent location history
2009–2016Based in Gyeonggi-do, KR· patent location history
2009–2011Based in Yongin-si, KR· patent location history
2012–2014Patents assigned to LEE JONG-CHEOL (6)· patent assignee history
2012–2014Patents assigned to PARK KI-YEON (6)· patent assignee history
2012–2014Patents assigned to IM KI-VIN (3)· patent assignee history
2012–2014Patents assigned to LEE JUN-NOH (3)· patent assignee history
2012–2020Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 45 | 2001–2020 |
| LEE JONG-CHEOL | 6 | 2012–2014 |
| PARK KI-YEONself | 6 | 2012–2014 |
| IM KI-VIN | 3 | 2012–2014 |
| LEE JUN-NOH | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 18 | 2012–2020 |
| Seoul, KR | 18 | 2002–2014 |
| Gyeonggi-do, KR | 4 | 2009–2016 |
| Yongin-si, KR | 2 | 2009–2011 |
| Yongin, KR | 2 | 2001–2006 |