Inventor
MING-HENG TSAI
Inventor
TW
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices53%
H01LSemiconductor devices29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
12,563,798Semiconductor device having nanosheet transistor and methods of fabrication thereof202612,550,428Semiconductor device202612,538,533Semiconductor device structure and method for forming the same202612,507,450—202512,408,425Semiconductor structure with high integration density and method for manufacturing the same202512,040,237Semiconductor device structure with spacer202411,923,455Semiconductor device and method of forming the same202411,450,667Semiconductor device for increasing capacitance effective area and effective capacitance value202211,348,841Semiconductor device structure with recessed spacer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2022Patents assigned to RAYDIUM SEMICONDUCTOR CORP (1)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2022–2026 |
| RAYDIUM SEMICONDUCTOR CORP | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 9 | 2022–2026 |